This new edition of Infrared and Terahertz Detectors provides a comprehensive overview of
infrared and terahertz detector technology, from fundamental science to materials and …

A near-infrared (NIR) photodetector built from chemically exfoliated multilayer MoS 2 films
was investigated. Devices that are photoresponsive to wavelengths up to 1550 nm were …

We present an optical spectroscopy analysis of the molecular beam epitaxy-grown
InAs/GaSb quantum systems to study the higher-order optical transitions in InAs/GaSb …

Heterostructures with two dissimilar materials could offer unprecedented properties if one
can carefully synthesize these heterostructures with atomically smooth interfaces and …

In-plane uniformity of narrow-gap semiconductor In As/Ga Sb type-II superlattice (T2SL)
wafer is a crucial yet hard-to-evaluate prerequisite for high-performance long-wavelength …

The paper presents a low noise voltage FET amplifier for low frequency noise
measurements. It was built using two stages of an op amp transimpedance amplifier. To …

1/f noise-dark current correlation of pin InAs/GaSb T2SL detectors was analyzed.
Experiments include current and noise measurements versus voltage and temperature …

Low frequency noise spectroscopy is a valuable tool for studying narrow gap semiconductor
materials and devices. In the paper, the method of traps investigation with low frequency …

The empirical 1/f noise model for p^++-pn infrared detector made of type-II InAs/GaSb
superlattice material is presented. It is shown that 1/f noise magnitude can be accurately …

Currently, colloidal quantum dots (CQDs) photodetectors have shown significant
advancement in the field of infrared photodetection. However, the immature analysis of dark …