Progress of Reliability and Failure Mechanisms for GaN‐Based Light‐Emitting Diodes

L Zhao, L Liu, P Qi - physica status solidi (a), 2022 - Wiley Online Library
To achieve high reliable GaN‐based LEDs with a controllable lifetime is one of the key
issues for applications. In this review, an overview of reliability studies for different GaN …

Reliability investigation of light-emitting diodes via low frequency noise characteristics

S Pralgauskaitė, V Palenskis, J Matukas… - Microelectronics …, 2015 - Elsevier
Investigation of changes of operation and noise characteristics during aging process of light-
emitting diodes (LEDs) has been carried out. Several groups of different design (different …

Bayesian models for life prediction and fault-mode classification in solid state lamps

P Lall, J Wei, P Sakalaukus - 2015 16th International …, 2015 - ieeexplore.ieee.org
A new method has been developed for assessment of the onset of degradation in solid state
luminaires to classify failure mechanisms by using metrics beyond lumen degradation that …

Effect of AlGaN interlayer on luminous efficiency and reliability of GaN-based green LEDs on silicon substrate

JX Guo, J Ding, CL Mo, CD Zheng, S Pan… - Chinese Physics …, 2020 - iopscience.iop.org
The effect of AlGaN interlayer in quantum barrier on the electroluminescence characteristics
of GaN-based green light emitting diodes (LEDs) grown on silicon substrate was …

Optical degradation mechanisms of indium gallium nitride-based white light emitting diodes by high-temperature aging tests

YJ Lu, ZQ Guo, TM Shih, YL Gao… - IEEE Transactions …, 2015 - ieeexplore.ieee.org
We have measured five major mechanisms that govern light-emitting diode (LED)
degradation, calculated respective percentages, and identified the most influential …

Achievements and perspectives of GaN based light emitting diodes: A critical review

S Ahmad, MA Raushan… - … Conference on Trends in …, 2017 - ieeexplore.ieee.org
GaN based high brightness white LEDs have been developed as the future of lightening
system. Due to their efficiency and exceptionally long lifetime they are seen as a permanent …

N-contacts degradation analysis of white flip chip LEDs during reliability tests

B Hamon, B Bataillou, L Mendizabal… - 2014 IEEE …, 2014 - ieeexplore.ieee.org
Current and temperature aging have been conducted on flip chip high power light emitting
diodes (LEDs) with Al-Ni-Ti-Au n-contacts. Electrical and optical characteristics have been …

GaN-based LEDs: State of the art and reliability-limiting mechanisms

E Zanoni, M Meneghini, N Trivellin… - … and Mulit-Physics …, 2014 - ieeexplore.ieee.org
This paper reviews the main characteristics of state-of-the art high-brightness light-emitting
diodes (LEDs), and the mechanisms responsible for the degradation of these devices. After …

Analysis of Forward Tunnelling Current in GaN-based Blue LEDs

R Jian, L Li, D Yan, X Gu - … of the 2nd International Conference on …, 2013 - atlantis-press.com
We present a systematic analysis of the forward tunnelling current in GaN-based blue light-
emitting diodes by using the current-voltage (IV) measurements from 100 K to 300 K. The …

Ultraviolet light emitting diode use in advanced oxidation processes

KL Duckworth - 2014 - scholar.afit.edu
Cleanup from a hazardous chemical release can result in large volumes of water containing
hazardous materials, such as organophosphates. Unfortunately, this water cannot be treated …