Nanometre-scale semiconductor devices have been envisioned as next-generation
technologies with high integration and functionality. Quantum dots, or the so-called'artificial …

Abstract Development of Si photonic integrated circuits (PICs) has been impeded due to lack
of efficient Si-based light-emitting sources. Because of their indirect bandgap, bulk Ge and …

In this paper, we review the current status of the hybrid silicon photonic integration platform
with emphasis on its prospects for increased integration complexity. The hybrid silicon …

We demonstrate record performance 1.3 μm InAs quantum dot lasers grown on silicon by
molecular beam epitaxy. Ridge waveguide lasers fabricated from the as-grown material …

The mid-infrared spectral region, 2–20 μm, is of great interest for sensing and detection
applications, in part because the vibrational transition energies of numerous molecules fall …

We report on the first electrically pumped continuous-wave (cw) InAs/GaAs quantum dot
(QD) lasers monolithically grown on on-axis Si (001) substrates without any intermediate …

We compare InAlAs/GaAs and InGaAs/GaAs strained-layer superlattices (SLSs) as
dislocation filter layers for 1.3-μm InAs/GaAs quantum-dot laser structures directly grown on …

A cost-effective route to build electrically as well as optically controlled modulators in silicon
photonics is reviewed. The technology enables modulation at bit rates beyond 100 Gbit/s …

We review the state of the art and our perspectives on silicon and hybrid silicon photonic
devices for optical interconnects in datacenters. After a brief discussion of the key …

An explosive increase in volume of global network and data center traffic requires an
interconnection scheme with low cost, high energy efficiency, and high bandwidth capacity …