[HTML][HTML] A review of Ga2O3 materials, processing, and devices

SJ Pearton, J Yang, PH Cary, F Ren, J Kim… - Applied Physics …, 2018 - pubs.aip.org
Gallium oxide (Ga 2 O 3) is emerging as a viable candidate for certain classes of power
electronics, solar blind UV photodetectors, solar cells, and sensors with capabilities beyond …

Review of gallium-oxide-based solar-blind ultraviolet photodetectors

X Chen, F Ren, S Gu, J Ye - Photonics Research, 2019 - opg.optica.org
Solar-blind photodetectors are of great interest to a wide range of industrial, civil,
environmental, and biological applications. As one of the emerging ultrawide-bandgap …

Gallium oxide-based solar-blind ultraviolet photodetectors

X Chen, FF Ren, J Ye, S Gu - Semiconductor science and …, 2020 - iopscience.iop.org
Abstract Gallium oxide (Ga 2 O 3) is an emerging ultrawide bandgap (UWBG)
semiconducting material as a key building block for the applications of power electronics …

An approach to emerging optical and optoelectronic applications based on NiO micro-and nanostructures

M Taeño, D Maestre, A Cremades - Nanophotonics, 2021 - degruyter.com
Nickel oxide (NiO) is one of the very few p-type semiconducting oxides, the study of which is
gaining increasing attention in recent years due to its potential applicability in many …

Influence of Sn and Cr Doping on Morphology and Luminescence of Thermally Grown Ga2O3 Nanowires

I López, E Nogales, B Méndez, J Piqueras… - The Journal of …, 2013 - ACS Publications
Elongated micro-and nanostructures of Sn doped or Sn and Cr codoped monoclinic gallium
oxide have been grown by a thermal method. The presence of Sn during growth has been …

Wide Dynamic Range Thermometer Based on Luminescent Optical Cavities in Ga2O3:Cr Nanowires

M Alonso‐Orts, D Carrasco, JM San Juan, ML Nó… - Small, 2022 - Wiley Online Library
Remote temperature sensing at the micro‐and nanoscale is key in fields such as photonics,
electronics, energy, or biomedicine, with optical properties being one of the most used …

β-Ga2O3 nanowires for an ultraviolet light selective frequency photodetector

I López, A Castaldini, A Cavallini… - Journal of Physics D …, 2014 - iopscience.iop.org
The behaviour of β-Ga 2 O 3 nanowires as photoconductive material in deep ultraviolet
photodetectors to operate in the energy range 3.0–6.2 eV has been investigated. The …

Growth and characterization of Cr doped SnO 2 microtubes with resonant cavity modes

M García-Tecedor, D Maestre, A Cremades… - Journal of Materials …, 2016 - pubs.rsc.org
Cr doped SnO2 microtubes have been fabricated by a thermal evaporation–deposition
method. The microtubes are formed by {110} lateral faces and their growth direction is [001] …

Crossed Ga2O3/SnO2 Multiwire Architecture: A Local Structure Study with Nanometer Resolution

G Martínez-Criado, J Segura-Ruiz, MH Chu… - Nano …, 2014 - ACS Publications
Crossed nanowire structures are the basis for high-density integration of a variety of
nanodevices. Owing to the critical role of nanowires intersections in creating hybrid …

Influence of Li doping on the morphology and luminescence of Ga2O3 microrods grown by a vapor-solid method

I López, M Alonso-Orts, E Nogales… - Semiconductor …, 2016 - iopscience.iop.org
Gallium oxide microrods have been grown by an evaporation-deposition method by using a
precursor containing lithium in order to check the influence of such dopant on the …