[HTML][HTML] A review of Ga2O3 materials, processing, and devices
Gallium oxide (Ga 2 O 3) is emerging as a viable candidate for certain classes of power
electronics, solar blind UV photodetectors, solar cells, and sensors with capabilities beyond …
electronics, solar blind UV photodetectors, solar cells, and sensors with capabilities beyond …
Review of gallium-oxide-based solar-blind ultraviolet photodetectors
Solar-blind photodetectors are of great interest to a wide range of industrial, civil,
environmental, and biological applications. As one of the emerging ultrawide-bandgap …
environmental, and biological applications. As one of the emerging ultrawide-bandgap …
Gallium oxide-based solar-blind ultraviolet photodetectors
Abstract Gallium oxide (Ga 2 O 3) is an emerging ultrawide bandgap (UWBG)
semiconducting material as a key building block for the applications of power electronics …
semiconducting material as a key building block for the applications of power electronics …
An approach to emerging optical and optoelectronic applications based on NiO micro-and nanostructures
Nickel oxide (NiO) is one of the very few p-type semiconducting oxides, the study of which is
gaining increasing attention in recent years due to its potential applicability in many …
gaining increasing attention in recent years due to its potential applicability in many …
Influence of Sn and Cr Doping on Morphology and Luminescence of Thermally Grown Ga2O3 Nanowires
Elongated micro-and nanostructures of Sn doped or Sn and Cr codoped monoclinic gallium
oxide have been grown by a thermal method. The presence of Sn during growth has been …
oxide have been grown by a thermal method. The presence of Sn during growth has been …
Wide Dynamic Range Thermometer Based on Luminescent Optical Cavities in Ga2O3:Cr Nanowires
Remote temperature sensing at the micro‐and nanoscale is key in fields such as photonics,
electronics, energy, or biomedicine, with optical properties being one of the most used …
electronics, energy, or biomedicine, with optical properties being one of the most used …
β-Ga2O3 nanowires for an ultraviolet light selective frequency photodetector
I López, A Castaldini, A Cavallini… - Journal of Physics D …, 2014 - iopscience.iop.org
The behaviour of β-Ga 2 O 3 nanowires as photoconductive material in deep ultraviolet
photodetectors to operate in the energy range 3.0–6.2 eV has been investigated. The …
photodetectors to operate in the energy range 3.0–6.2 eV has been investigated. The …
Growth and characterization of Cr doped SnO 2 microtubes with resonant cavity modes
Cr doped SnO2 microtubes have been fabricated by a thermal evaporation–deposition
method. The microtubes are formed by {110} lateral faces and their growth direction is [001] …
method. The microtubes are formed by {110} lateral faces and their growth direction is [001] …
Crossed Ga2O3/SnO2 Multiwire Architecture: A Local Structure Study with Nanometer Resolution
Crossed nanowire structures are the basis for high-density integration of a variety of
nanodevices. Owing to the critical role of nanowires intersections in creating hybrid …
nanodevices. Owing to the critical role of nanowires intersections in creating hybrid …
Influence of Li doping on the morphology and luminescence of Ga2O3 microrods grown by a vapor-solid method
I López, M Alonso-Orts, E Nogales… - Semiconductor …, 2016 - iopscience.iop.org
Gallium oxide microrods have been grown by an evaporation-deposition method by using a
precursor containing lithium in order to check the influence of such dopant on the …
precursor containing lithium in order to check the influence of such dopant on the …