Quantum dot opto-electronic devices
P Bhattacharya, S Ghosh… - Annu. Rev. Mater …, 2004 - annualreviews.org
▪ Abstract Highly strained semiconductors grow epitaxially on mismatched substrates in the
Stranski-Krastanow growth mode, wherein islands are formed after a few monolayers of …
Stranski-Krastanow growth mode, wherein islands are formed after a few monolayers of …
Nanostructured materials and architectures for advanced infrared photodetection
Infrared photodetectors are finding widespread applications in telecommunication, motion
detection, chemical sensing, thermal imaging and bio‐medical imaging, etc. The …
detection, chemical sensing, thermal imaging and bio‐medical imaging, etc. The …
[图书][B] Semiconductor physical electronics
SS Li - 2012 - books.google.com
The purpose of this book is to provide the reader with a self-contained treatment of
fundamen tal solid state and semiconductor device physics. The material presented in the …
fundamen tal solid state and semiconductor device physics. The material presented in the …
nBn detector, an infrared detector with reduced dark current and higher operating temperature
S Maimon, GW Wicks - Applied Physics Letters, 2006 - pubs.aip.org
This letter presents a type of infrared detector named the n B n detector. The n B n design
essentially eliminates Shockley-Read-Hall generation currents. The result is greatly reduced …
essentially eliminates Shockley-Read-Hall generation currents. The result is greatly reduced …
Quantum dots-in-a-well infrared photodetectors
S Krishna - Journal of Physics D: Applied Physics, 2005 - iopscience.iop.org
Abstract Novel InAs/InGaAs quantum dots-in-a-well (DWELL) infrared photodetectors are
reviewed. These detectors, in which the active region consists of InAs quantum dots (QDs) …
reviewed. These detectors, in which the active region consists of InAs quantum dots (QDs) …
Theoretical and experimental examination of the intermediate-band concept for strain-balanced (In, Ga) As/Ga (As, P) quantum dot solar cells
The intermediate-band solar cell (IBSC) concept has been recently proposed to enhance the
current gain from the solar spectrum whilst maintaining a large open-circuit voltage. Its main …
current gain from the solar spectrum whilst maintaining a large open-circuit voltage. Its main …
Characteristics of a tunneling quantum-dot infrared photodetector operating at room temperature
P Bhattacharya, XH Su, S Chakrabarti… - Applied Physics …, 2005 - pubs.aip.org
We report high-temperature (240–300 K) operation of a tunneling quantum-dot infrared
photodetector. The device displays two-color characteristics with photoresponse peaks at∼ …
photodetector. The device displays two-color characteristics with photoresponse peaks at∼ …
Bound-to-continuum intersubband photoconductivity of self-assembled InAs quantum dots in modulation-doped heterostructures
SW Lee, K Hirakawa, Y Shimada - Applied Physics Letters, 1999 - pubs.aip.org
We have designed and fabricated a quantum dot infrared photodetector which utilizes the
lateral transport of photoexcited carriers in the modulation-doped AlGaAs/GaAs two …
lateral transport of photoexcited carriers in the modulation-doped AlGaAs/GaAs two …
Review of current progress in quantum dot infrared photodetectors
Quantum dot infrared photodetectors (QDIPs) have made significant progress after their
early demonstration about a decade ago. We review the progress made by QDIP technology …
early demonstration about a decade ago. We review the progress made by QDIP technology …
Enhanced performance of ZnO nanoparticle decorated all-inorganic CsPbBr 3 quantum dot photodetectors
All-inorganic perovskite quantum dots have attracted substantial attention due to their
excellent optical properties. However, the surface states of colloidal quantum dots and the …
excellent optical properties. However, the surface states of colloidal quantum dots and the …