Miniaturized photodetectors are becoming increasingly sought-after components for next-
generation technologies, such as autonomous vehicles, integrated wearable devices, or …

We report on ultraviolet (UV) sensors employing high voltage PIN lateral photodiode strings
integrated into the production RF SOI (silicon on isolator) CMOS platform. The sensors were …

A novel photodiode array structure is proposed and implemented in the paper. Based on the
silicon-on-insulator substrate, the structure adopts double SiO 2 layers for isolation among …

This work presents a study of the illuminated to dark ratio (IDR) of lateral SOI PIN
photodiodes. Measurements performed on fabricated devices show a fivefold improvement …

It is found that the traditional monochromatic incident photon-to-electron conversion
efficiency (IPCE) measurement method, such as the American Society for Testing and …

Visible light communication offers abundant spectrum resources, which can alleviate the
current shortage of wireless communication spectrum resources, and the security of the …

In this paper, we present a detailed analysis of leakage current in a silicon-on-insulator (SOI)
lateral P+ P-N+(pin) diode suspended on a microheating platform, combining device …

In this paper, we present a novel blue-sensitive Si photodetector. The detector is realized as
a Si diode with a vertical PN junction in the silicon-on-insulator (SOI) thin film for normal …

Based on the semiconductor-device structure and equations, we analyze the operation
principles of thin-film gated silicon-on insulator (SOI) Lateral PIN (LPIN) photodetectors, and …

In this paper, investigations of surface PiN diodes developed for a reconfigurable plasma
antenna have been described. To increase carrier concentration within the surface PiN …