Vertical GaN-on-GaN Schottky diodes as α-particle radiation sensors
Among the different semiconductors, GaN provides advantages over Si, SiC and GaAs in
radiation hardness, resulting in researchers exploring the development of GaN-based …
radiation hardness, resulting in researchers exploring the development of GaN-based …
Atomic-scale quantitative analysis of implanted Mg in annealed GaN layers on free-standing GaN substrates
Achieving efficient p-type conduction in Mg-implanted GaN depends largely on
postimplantation annealing conditions. Here, we study the effect of postimplantation …
postimplantation annealing conditions. Here, we study the effect of postimplantation …
Power Performance of AlGaN/GaN High‐Electron‐Mobility Transistors with AlN Buffer on SiC Substrate at 3.5 GHz
Herein, a 3.5 GHz (S‐band) power performance is reported on an AlGaN/GaN high‐electron‐
mobility transistor (HEMT) with AlN buffer on SiC substrate. A 4 inch epi‐wafer is grown by …
mobility transistor (HEMT) with AlN buffer on SiC substrate. A 4 inch epi‐wafer is grown by …
Improved breakdown voltage in vertical GaN Schottky barrier diodes on free-standing GaN with Mg-compensated drift layer
Vertical Schottky barrier diodes (SBD) were fabricated on 1a 5 μm thick GaN drift layer (DL)
with and without Mg-compensation grown by metal organic chemical vapour deposition on …
with and without Mg-compensation grown by metal organic chemical vapour deposition on …
Influence of doping profile of GaN: Fe buffer layer on the properties of AlGaN/AlN/GaN heterostructures for high-electron mobility transistors
DS Arteev, AV Sakharov, WV Lundin… - Journal of Physics …, 2020 - iopscience.iop.org
The effect of the Fe doping profile of the GaN buffer layer in the heterostructures for high-
electron mobility transistors was studied experimentally and by computer simulation. The …
electron mobility transistors was studied experimentally and by computer simulation. The …
Direct Current and Radio Frequency Characterizations of AlGaN/AlN/GaN/AlN Double‐Heterostructure High‐Electron Mobility Transistor (DH‐HEMT) on Sapphire
The AlGaN/AlN/GaN/AlN double‐heterostructure high‐electron mobility transistor (DH‐
HEMT) on sapphire substrate is introduced, and its direct current (DC) and radio frequency …
HEMT) on sapphire substrate is introduced, and its direct current (DC) and radio frequency …
Electron concentration in highly resistive GaN substrates co-doped with Si, C, and Fe
H Tokuda, K Suzuki, JT Asubar… - Japanese Journal of …, 2018 - iopscience.iop.org
Electron concentration in highly resistive GaN substrates with intentional iron (Fe) dopants
as well as unintentionally incorporated silicon (Si) and carbon (C) dopants has been …
as well as unintentionally incorporated silicon (Si) and carbon (C) dopants has been …
Mg Doping of N-Polar, In-Rich InAlN
J Kuzmík, O Pohorelec, S Hasenöhrl, M Blaho… - Materials, 2023 - mdpi.com
Metal organic chemical vapor deposition was used to grow N-polar In0. 63Al0. 37N on
sapphire substrates. P-doping was provided by a precursor flow of Cp2Mg between 0 and …
sapphire substrates. P-doping was provided by a precursor flow of Cp2Mg between 0 and …
Effects of drift layer thicknesses in reverse conduction mechanism on vertical GaN-on-GaN SBDs grown by MOCVD
Effect of drift layer thicknesses (DLT)(2, 15 and 30μm) in reverse current conduction
mechanisms of vertical GaN-on-GaN Schottky Barrier Diodes grown MOCVD has been …
mechanisms of vertical GaN-on-GaN Schottky Barrier Diodes grown MOCVD has been …
Fast-switching monolithically integrated high-voltage GaN-on-Si power converters
B Weiß - 2018 - publica.fraunhofer.de
The lateral, high-voltage aluminum gallium nitride (AlGaN)/GaN-on-silicon (Si) technology
allows the design of effcient, fast switching high-voltage transistors due to the excellent …
allows the design of effcient, fast switching high-voltage transistors due to the excellent …