Controlled spalling is a fast process that can mechanically exfoliate III-V semiconductor
layers from their host wafer substrates and has the potential to produce high power-density …

III–V semiconductors such as InP and GaAs are direct bandgap semiconductors with
significantly higher absorption compared to silicon. The high absorption allows for the …

Slicing and post-treatment of SiC crystals have been a significant challenge in the integrated
circuit and microelectronics industry. To compete with wire-sawing and mechanical grinding …

Silicon carbide (SiC), the third-generation semiconductor material, is important in
developing electronic power devices. Compared to wire sawing technology, Laser splitting …

Crystalline Si (c‐Si) thin films have been widely studied for their application to solar cells
and flexible electronics. However, their application at large scale is limited by their …

Utilisation of expensive silicon (Si) material in crystalline Si modules has come down to 4 g
Si per watt-peak in 2018, mainly as a result of reduction in wafer thickness and kerf losses …

We analyze the effect of growth on non-(100) surfaces resulting from incomplete
planarization of spalled GaAs wafers on the defect structure of GaAs solar cell layers grown …

We report on the results of intense third party evaluation of the COLD SPLIT technology. In
total nine different SiC manufactures supplied test material. The results confirm the …

Spalling has been proposed as a promising kerfless technique for slicing thin silicon wafers
and thus double the yield of a silicon ingot. The main challenge of spalling is to control the …

In evaluating the state-of-the-art spalling techniques, the key factor that is missing is the
control of crack propagation, which is responsible for low quality wafers due to high surface …