Model of temperature quenching of photoluminescence in disordered semiconductors and comparison to experiment
O Rubel, SD Baranovskii, K Hantke, B Kunert… - Physical Review B …, 2006 - APS
A phenomenological model is suggested to describe nonradiative recombination of optical
excitations in disordered semiconductor heterostructures. The general property of …
excitations in disordered semiconductor heterostructures. The general property of …
[HTML][HTML] Photoluminescence study of the interface fluctuation effect for InGaAs/InAlAs/InP single quantum well with different thickness
Y Wang, X Sheng, Q Guo, X Li, S Wang, G Fu… - Nanoscale Research …, 2017 - Springer
Photoluminescence (PL) is investigated as a function of the excitation intensity and
temperature for lattice-matched InGaAs/InAlAs quantum well (QW) structures with well …
temperature for lattice-matched InGaAs/InAlAs quantum well (QW) structures with well …
Mechanisms of infrared photoluminescence in HgTe/HgCdTe superlattice
Temperature (11–250 K) and excitation power (5–480 mW) dependent infrared
photoluminescence (PL) measurements are conducted on a HgTe/Hg 0.05 Cd 0.95 Te …
photoluminescence (PL) measurements are conducted on a HgTe/Hg 0.05 Cd 0.95 Te …
Photoluminescence study on the optical properties of silicon-vacancy centre in diamond
Y Zhang, K Wang, G Jia, J Li, H Wang, Y Tian - Journal of Alloys and …, 2021 - Elsevier
The optical properties of a silicon-vacancy (Si–V) centre were studied using
photoluminescence (PL), including the temperature (80 K–270 K) and excitation power (2.25 …
photoluminescence (PL), including the temperature (80 K–270 K) and excitation power (2.25 …
Compositional inhomogeneities in type-I and type-II superlattices for GaAsSbN-based solar cells: Effect of thermal annealing
GaAsSbN alloys is recognized as an effective candidate to incorporate in multijunction solar
cell applications due to its advantages of being grown lattice-matched to GaAs and its …
cell applications due to its advantages of being grown lattice-matched to GaAs and its …
Theoretical analyses of the carrier localization effect on the photoluminescence of In-rich InGaAs layer grown on InP
Abstract The free buffer InGaAs/InP structure has been elaborated by Metal Organic Vapor
Phase Epitaxy (MOVPE). High indium content is chosen to reduce the bandgap energy of …
Phase Epitaxy (MOVPE). High indium content is chosen to reduce the bandgap energy of …
Impact of digital alloy capping layers on bilayer InAs quantum dot heterostructures
The influence of digital alloy capping technique on the strain-coupled bilayer InAs quantum
dots (QDs) has been presented. Multiple capping layers of different composition have been …
dots (QDs) has been presented. Multiple capping layers of different composition have been …
Photoluminescence study of exciton localization in InGaAs bulk and InGaAs/InAlAs wide quantum well on InP (001) substrate
S Luo, Y Wang, B Liang, C Wang, S Wang, G Fu… - Journal of …, 2022 - Elsevier
Exciton localization has been investigated via photoluminescence (PL) measurements for a
50 nm InGaAs/InAlAs wide quantum well (QW) lattice-matched to an InP substrate. Discrete …
50 nm InGaAs/InAlAs wide quantum well (QW) lattice-matched to an InP substrate. Discrete …
The effect of potential fluctuations on the optical properties of InGaAs∕ InGaAlAs single and coupled double quantum wells
A study was conducted on potential fluctuations using the photoluminescence (PL)
technique with temperature and excitation intensity variations, in a sample containing In Ga …
technique with temperature and excitation intensity variations, in a sample containing In Ga …
Influence of Fröhlich Interaction on Intersubband Transitions of InGaAs/InAlAs-Based Quantum Cascade Detector Structures Investigated by Infrared Modulated …
L Zhu, S Liu, J Shao, X Chen, F Liu, Z Hu… - Chinese Physics …, 2023 - iopscience.iop.org
We demonstrate the use of an infrared modulated photoluminescence (PL) method based
on a step-scan Fourier-transform infrared spectrometer to analyze intersubband transition …
on a step-scan Fourier-transform infrared spectrometer to analyze intersubband transition …