Recent advances in free-standing single crystalline wide band-gap semiconductors and their applications: GaN, SiC, ZnO, β-Ga 2 O 3, and diamond
Free-standing single crystalline semiconductor membranes have gained intensive attention
over the last few years due to their versatile usage in many applications. This material …
over the last few years due to their versatile usage in many applications. This material …
N-polar GaN epitaxy and high electron mobility transistors
This paper reviews the progress of N-polar ($000\mathop 1\limits^\_ $) GaN high frequency
electronics that aims at addressing the device scaling challenges faced by GaN high …
electronics that aims at addressing the device scaling challenges faced by GaN high …
Scaling of GaN HEMTs and Schottky diodes for submillimeter-wave MMIC applications
K Shinohara, DC Regan, Y Tang… - … on Electron Devices, 2013 - ieeexplore.ieee.org
In this paper, we report state-of-the-art high frequency performance of GaN-based high
electron mobility transistors (HEMTs) and Schottky diodes achieved through innovative …
electron mobility transistors (HEMTs) and Schottky diodes achieved through innovative …
GaN-based RF power devices and amplifiers
UK Mishra, L Shen, TE Kazior… - Proceedings of the IEEE, 2008 - ieeexplore.ieee.org
The rapid development of the RF power electronics requires the introduction of wide
bandgap material due to its potential in high output power density, high operation voltage …
bandgap material due to its potential in high output power density, high operation voltage …
Effects of strain and surface modification on stability, electronic and optical properties of GaN monolayer
H Shu, XH Niu, XJ Ding, Y Wang - Applied Surface Science, 2019 - Elsevier
Employing density-functional theory, G 0 W 0 approach, and solving Bethe–Salpter equation
(BSE), we investigate the effects of strain and surface modification (hydrogenation or …
(BSE), we investigate the effects of strain and surface modification (hydrogenation or …
300-ghz inaln/gan hemts with ingan back barrier
DS Lee, X Gao, S Guo, D Kopp, P Fay… - IEEE Electron Device …, 2011 - ieeexplore.ieee.org
This letter reports lattice-matched In 0.17 Al 0.83 N/GaN high-electron-mobility transistors on
a SiC substrate with a record current gain cutoff frequency (f T) of 300 GHz. To suppress the …
a SiC substrate with a record current gain cutoff frequency (f T) of 300 GHz. To suppress the …
Short-channel effect limitations on high-frequency operation of AlGaN/GaN HEMTs for T-gate devices
AlGaN/GaN high-electron mobility transistors (HEMTs) were fabricated on SiC substrates
with epitaxial layers grown by multiple suppliers and methods. Devices with gate lengths …
with epitaxial layers grown by multiple suppliers and methods. Devices with gate lengths …
Polarity in GaN and ZnO: Theory, measurement, growth, and devices
The polar nature of the wurtzite crystalline structure of GaN and ZnO results in the existence
of a spontaneous electric polarization within these materials and their associated alloys (Ga …
of a spontaneous electric polarization within these materials and their associated alloys (Ga …
Inaln/gan hemts with algan back barriers
DS Lee, X Gao, S Guo… - IEEE Electron Device …, 2011 - ieeexplore.ieee.org
This letter studies the effect of AlGaN back barriers in the dc and RF performance of In 0.17
Al 0.83 N/GaN high-electron mobility transistors grown on SiC substrates. When compared …
Al 0.83 N/GaN high-electron mobility transistors grown on SiC substrates. When compared …
Evaluation of Low-Temperature Saturation Velocity in -(AlxGa1–x)2O3/Ga2O3 Modulation-Doped Field-Effect Transistors
We report on the high-field transport characteristics and saturation velocity in a modulation-
doped β-(Al x Ga 1-x) 2 O 3/Ga 2 O 3 heterostructure. The formation of a 2-D electron gas …
doped β-(Al x Ga 1-x) 2 O 3/Ga 2 O 3 heterostructure. The formation of a 2-D electron gas …