Spin-polarized photoemission from wurtzite and zinc blende gallium nitride (GaN)
photocathodes has been observed and measured. The p-doped GaN photocathodes were …

In this paper, Si-doped GaN template layer and nitride-based multiple quantum well (MQW)
light-emitting diodes (LEDs) with conventional GaN buffer layer and GaN buffer layer using …

GaN-based semiconductor structures have been widely used in photonic, electronic, and
optoelectronic devices. However, due to the lack of lattice-matched substrates for GaN …

In this paper, we present a systematic study of the optical properties evolution of GaN films
during the complete growth process on SiN-treated sapphire substrates by atmospheric …

GaN-based structures have been employed in a range of electronic and optoelectronic
applications. Despite the extensive utilization of hexagonal GaN (h-GaN), certain devices …

The size and density of nanopits, generated at the surface of their top layer, strongly affect
the electrical and optical properties of AlGaN-based structures. Therefore, the control of the …

We investigated the partial decomposition of GaN layers grown with different coalescence
degrees by atmospheric pressure metal organic vapor phase epitaxy (AP-MOVPE) on SiN …

In the current study, we investigated the partial decomposition of GaN layers grown on SiN-
treated sapphire substrate in an atmospheric pressure metal organic vapor phase epitaxy …

The decomposition of GaN layers have been in situ monitored by a spectral reflectance
system. A particular interest is given to the early stages of GaN decomposition. The analysis …

In this paper, we report a systematic investigation of the near band edge (NBE) excitonic
states in GaN using low temperature photoluminescence (PL) and photoreflectance (PR) …