Model system for optical nonlinearities: asymmetric quantum wells
E Rosencher, P Bois - Physical Review B, 1991 - APS
Optical nonlinearities in asymmetric quantum wells due to resonant intersubband transitions
are analyzed using a compact density-matrix approach. The large dipolar matrix elements …
are analyzed using a compact density-matrix approach. The large dipolar matrix elements …
The basic physics of intersubband transitions
M Helm - Semiconductors and semimetals, 1999 - Elsevier
Publisher Summary This chapter focuses on the basic aspects of intersubband transitions,
with the main emphasis on linear absorption. An expression for the intersubband absorption …
with the main emphasis on linear absorption. An expression for the intersubband absorption …
Free carrier induced changes in the absorption and refractive index for intersubband optical transitions in AlxGa1− xAs/GaAs/AlxGa1− xAs quantum wells
KJ Kuhn, GU Iyengar, S Yee - Journal of Applied Physics, 1991 - pubs.aip.org
The changes in the real index of refraction and the optical absorption for conduction
intersubband transitions in AIXGal _ &/GaAs/AIXGal _ As quantum wells are examined as a …
intersubband transitions in AIXGal _ &/GaAs/AIXGal _ As quantum wells are examined as a …
Photoexcited escape probability, optical gain, and noise in quantum well infrared photodetectors
BF Levine, A Zussman, SD Gunapala… - Journal of applied …, 1992 - pubs.aip.org
We present a detailed and thorough study of a wide variety of quantum well infrared
photodetectors (QWIPs), which were chosen to have large differences in their optical and …
photodetectors (QWIPs), which were chosen to have large differences in their optical and …
Interlevel Ge/Si quantum dot infrared photodetector
AI Yakimov, AV Dvurechenskii, AI Nikiforov… - Journal of Applied …, 2001 - pubs.aip.org
A self-assembled Ge/Si quantum dot interlevel infrared photodetector operating at room
temperature and at normal incidence is demonstrated. The spectral response exhibits two …
temperature and at normal incidence is demonstrated. The spectral response exhibits two …
[图书][B] Device physics of narrow gap semiconductors
J Chu, A Sher - 2009 - books.google.com
Narrow gap semiconductors obey the general rules of semiconductor science, but often
exhibit extreme features of these rules because of the same properties that produce their …
exhibit extreme features of these rules because of the same properties that produce their …
Tunable infrared modulator and switch using Stark shift in step quantum wells
RPG Karunasiri, YJ Mii, KL Wang - IEEE electron device letters, 1990 - ieeexplore.ieee.org
A tunable infrared modulator and/or switch using intersubband Stark shift in a step quantum
well is discussed. The device utilizes the intersubband absorption and the large change of …
well is discussed. The device utilizes the intersubband absorption and the large change of …
Infrared spectroscopy and transport of electrons in semiconductor superlattices
M Helm - Semiconductor science and technology, 1995 - iopscience.iop.org
Infrared spectroscopy is a powerful tool for revealing some key properties of electrons in the
minibands of semiconductor superlattices. Some theoretical foundations of superlattice …
minibands of semiconductor superlattices. Some theoretical foundations of superlattice …
Optically pumped four-level infrared laser based on intersubband transitions in multiple quantum wells: feasibility study
G Sun, JB Khurgin - IEEE journal of quantum electronics, 1993 - ieeexplore.ieee.org
The feasibility of optically pumped infrared laser based on the intersubband transitions in
multiple quantum wells is studied theoretically. The criteria for population inversion and …
multiple quantum wells is studied theoretically. The criteria for population inversion and …
Large Stark shifts of the local to global state intersubband transitions in step quantum wells
YJ Mii, RPG Karunasiri, KL Wang, M Chen… - Applied physics …, 1990 - pubs.aip.org
Large Stark shifts of intersubband transitions in a step quantum well are observed for the first
time. The Stark shifts are∼ 8 and 7 meV at∼ 18 kV/cm for the 1→ 2 and 1→ 3 intersubband …
time. The Stark shifts are∼ 8 and 7 meV at∼ 18 kV/cm for the 1→ 2 and 1→ 3 intersubband …