[HTML][HTML] Bandgap engineering in III-nitrides with boron and group V elements: Toward applications in ultraviolet emitters
R Kudrawiec, D Hommel - Applied Physics Reviews, 2020 - pubs.aip.org
A key material system for opto-and high-power electronics are III-nitrides. Their functionality
can be expanded when bandgap engineering is extended beyond common materials such …
can be expanded when bandgap engineering is extended beyond common materials such …
Sulfur Vacancy-Driven Band Splitting and Phonon Anharmonicity Enhance the Thermoelectric Performance in n-Type CuFeS2
M Moorthy, P Govindaraj, R Parasuraman… - ACS Applied Energy …, 2024 - ACS Publications
Ternary chalcogenides of CuFeS2–x (x= 0.00–0.20) chalcopyrites were synthesized via
vacuum melting reaction/uniaxial hot pressing, and their thermoelectrical properties were …
vacuum melting reaction/uniaxial hot pressing, and their thermoelectrical properties were …
Reactively Sputtered Sb-GaN Films and its Hetero-Junction Diode: The Exploration of the n-to-p Transition
Sb anion-substituted gallium nitride films were fabricated by radio frequency reactive
sputtering with single Sb-containing cermet targets with different Sb contents under Ar/N2 …
sputtering with single Sb-containing cermet targets with different Sb contents under Ar/N2 …
[HTML][HTML] ZnO1− xTex highly mismatched alloys beyond the dilute alloy limit: Synthesis and electronic band structure
We have synthesized ZnO 1− x Te x highly mismatched alloys (HMAs) with high, up to x=
0.34, Te content using pulsed laser deposition. We have found that the film composition is …
0.34, Te content using pulsed laser deposition. We have found that the film composition is …
Dilute-antimonide GaSbN/GaN dots-in-wire heterostructures grown by molecular beam epitaxy: Structural and optical properties
We have investigated the epitaxy of GaSbN/GaN dots-in-wire heterostructures on a Si
substrate by plasma-assisted molecular beam epitaxy. The photoluminescence (PL) …
substrate by plasma-assisted molecular beam epitaxy. The photoluminescence (PL) …
[HTML][HTML] Analyzing k· p modeling in highly mismatched alloys and other III–V semiconductors
M Gladysiewicz, MS Wartak - Journal of Applied Physics, 2023 - pubs.aip.org
This Tutorial provides a comprehensive overview of various k⋅ p models used to describe
the electronic band structures of semiconductors with cubic diamond and zinc blende …
the electronic band structures of semiconductors with cubic diamond and zinc blende …
Ab initio investigation on the low-lying electronic states of magnesium antimonide
N Wang, N Lu, WB Zhang, CZ Zhang, YY Jin… - … Acta Part A: Molecular …, 2020 - Elsevier
The twelve Λ-S electronic states of the first four dissociation limits of the MgSb molecule
have been examined at the icMRCI+ Q level employing basis sets of quintuple-ζ quality. The …
have been examined at the icMRCI+ Q level employing basis sets of quintuple-ζ quality. The …
As-related stability of the band gap temperature dependence in N-rich GaNAs
E Zdanowicz, P Ciechanowicz, K Opolczynska… - Applied Physics …, 2019 - pubs.aip.org
GaNAs layers with a low As concentration (As≤ 0.6%) have been grown by molecular beam
epitaxy and studied by structural and optical methods. It has been observed that the …
epitaxy and studied by structural and optical methods. It has been observed that the …
Selective incorporation of antimony into gallium nitride
Dilute concentrations of antimony (Sb) incorporation into GaN induce strong band-gap
bowing and tunable room-temperature photoluminescence from the UV to the green spectral …
bowing and tunable room-temperature photoluminescence from the UV to the green spectral …
Electrochemical determination of the gallium-nitride photocorrosion potential in acidic media
DR Baker, CA Lundgren - Journal of Materials Chemistry A, 2017 - pubs.rsc.org
Gallium nitride-based semiconductors have demonstrated their usefulness as efficient light
absorbers with fast kinetics for photoelectrochemical water splitting, but they still need to …
absorbers with fast kinetics for photoelectrochemical water splitting, but they still need to …