Recent review on failures in silicon carbide power MOSFETs
DK Ngwashi, LV Phung - Microelectronics Reliability, 2021 - Elsevier
In every new technology, the understanding of its failure mechanism is essential to ensure
reliability. In this paper an overview on some state-of-the-art characterization methods of 4H …
reliability. In this paper an overview on some state-of-the-art characterization methods of 4H …
The trends of in situ focused ion beam technology: toward preparing transmission electron microscopy lamella and devices at the atomic scale
Z Zhang, W Wang, Z Dong, X Yang… - Advanced Electronic …, 2022 - Wiley Online Library
The increased complexity and scaling down of electronic devices lead to great challenges in
extracting an interesting nanoscale area of the device for transmission electron microscopy …
extracting an interesting nanoscale area of the device for transmission electron microscopy …
A Critical review on reliability and short circuit robustness of silicon carbide power MOSFETs
Superior electrical and physical properties of SiC (Silicon Carbide) make them ideal for
various high voltage, high frequency and high power electronic applications. When …
various high voltage, high frequency and high power electronic applications. When …
Measurements and Review of Failure Mechanisms and Reliability Constraints of 4H-SiC Power MOSFETs Under Short Circuit Events
The reliability of the SiC MOSFET has always been a factor hindering the device application,
especially under high voltage and high current conditions, such as in the short circuit events …
especially under high voltage and high current conditions, such as in the short circuit events …
[HTML][HTML] Investigation on safe-operating-area degradation and failure modes of sic mosfets under repetitive short-circuit conditions
Z Zhang, L Liang, H Fei - Power Electronic Devices and Components, 2023 - Elsevier
The safe operating area is an operating area with high reliability for SiC MOSFET, and its
degradation may cause power electronic system failure. The safe-operating-area …
degradation may cause power electronic system failure. The safe-operating-area …
[HTML][HTML] Electrothermal power cycling of 15 kV SiC PiN diodes
Through extensive experimental measurements for the static and dynamic characteristics,
the commercially available 15 kV Silicon Carbide (SiC) PiN diode are evaluated by power …
the commercially available 15 kV Silicon Carbide (SiC) PiN diode are evaluated by power …
Failure mechanism analysis of 1.2 kV SiC MOSFETs under low-temperature storage, power cycling, and short-circuit interactions
P Wang, Y Chen, X Zhu, H He… - IEEE Journal of Emerging …, 2024 - ieeexplore.ieee.org
The silicon carbide (SiC) metal oxide semiconductor field effect transistors (MOSFETs)
under real-world operating conditions contends with multistress scenarios, involving …
under real-world operating conditions contends with multistress scenarios, involving …
Short-circuit robustness of retrograde channel doping 1.2 kV SiC MOSFETs
PD Reigosa, N Schulz, R Minamisawa - Microelectronics Reliability, 2021 - Elsevier
In this paper, the performance of 1.2-kV SiC power MOSFETs having a retrograde channel
doping profile is compared to a conventional 1.2-kV SiC power MOSFET through TCAD …
doping profile is compared to a conventional 1.2-kV SiC power MOSFET through TCAD …
Short-circuit protection scheme with efficient soft turn-off for power modules
H Du, Y Bayarsaikhan, I Omura - Microelectronics Reliability, 2023 - Elsevier
With the increased current density of power semiconductor devices, their short-circuit
reliability becomes a critical concern, especially prominent in SiC MOSFETs, exhibiting a …
reliability becomes a critical concern, especially prominent in SiC MOSFETs, exhibiting a …
A mitigation strategy for the short-circuit degradation in SiC MOSFETs
H Du, F Iannuzzo - 2020 IEEE Workshop on Wide Bandgap …, 2020 - ieeexplore.ieee.org
The demand for highly reliable SiC MOSFETs is growing in the field applications, especially
considering the short-circuit conditions. With the development of faster protection, short …
considering the short-circuit conditions. With the development of faster protection, short …