Photon avalanche (PA)—where the absorption of a single photon initiates a 'chain
reaction'of additional absorption and energy transfer events within a material—is a highly …

The InSb photodetector on a Si substrate acts as a signal receiver for the mid-infrared silicon
photonics application to overcome the limitation of group IV semiconductors. In this paper …

The electronic structure of various (001),(110), and (111) B surfaces of n-type InSb was
studied with scanning tunneling microscopy and spectroscopy. The InSb (111) B (3× 1) …

InSb, a narrow-band III-V semiconductor, is known for its small bandgap, small electron
effective mass, high electron mobility, large effective g-factor, and strong spin-orbit …

The electronic structure of surfaces plays a key role in the properties of quantum devices.
However, surfaces are also the most challenging to simulate and engineer. Here, the …

In this paper, performance of mid‐infrared light emitting diodes (LEDs) with an InSb buffer
layer and AlInSb active/barrier layers, emitting at room temperature is reported. This film …

We present indium antimonide-based devices for mid-infrared (mid-IR) detection with
enhanced sensitivity. InSb devices will be useful for many applications, such as gas sensing …

We describe the development and optical characterization of a planar medium infrared (mid-
IR) InSb photodetector on a GaAs substrate technology, capable of integrating MESFETs, to …

In this paper, InAs_0. 81Sb_0. 19-based hetero-junction photovoltaic detector (HJPD) with
an In_0. 2Al_0. 8Sb barrier layer was grown on GaAs substrates. By using technology …

In this study, InSb pin photodetectors with In_0. 82Al_0. 18Sb barrier layers were grown on a
(100) 6° offcut Si substrate by heteroepitaxy via an AlSb/GaSb buffer. Based on an interfacial …