[图书][B] Silicon-germanium heterojunction bipolar transistors for extremely low-noise applications
JC Bardin - 2009 - search.proquest.com
Historically speaking, the world of extremely low-noise solid-state amplification has been
dominated by exotic technologies such as InP and GaAs HEMTs. By cryogenically cooling …
dominated by exotic technologies such as InP and GaAs HEMTs. By cryogenically cooling …
Frequency and bias-dependent modeling of correlated base and collector current RF noise in SiGe HBTs using quasi-static equivalent circuit
This paper presents modeling of correlated RF noise in the intrinsic base and collector
currents of SiGe heterojunction bipolar transistors using quasi-static equivalent circuits. The …
currents of SiGe heterojunction bipolar transistors using quasi-static equivalent circuits. The …
Improved RF noise modeling for silicon-germanium heterojunction bipolar transistors
K Xia - 2006 - etd.auburn.edu
Accurate radio frequency (RF) noise models for individual transistors are critical to minimize
noise during mixed-signal analog and RF circuit design. This dissertation proposes two …
noise during mixed-signal analog and RF circuit design. This dissertation proposes two …
[图书][B] Design and optimization of nano-scaled silicon-germanium heterojunction bipolar transistors
Y Shi - 2005 - search.proquest.com
In this work, we explore the design and optimization of nano-scaled SiGe HBTs. The cutoff
frequency f T and the maximum oscillation frequency f max are optimized towards Terahertz …
frequency f T and the maximum oscillation frequency f max are optimized towards Terahertz …
Efficient optimization of InGaAs and SiGe RF HBTs with a mixed-mode genetic-algorithm technique
HC Tseng - Solid-state electronics, 2006 - Elsevier
An efficient genetic-algorithm-based (GA-based) technique for modeling and analysis of RF
heterojunction bipolar transistors (HBTs) has been successfully established. This mixed …
heterojunction bipolar transistors (HBTs) has been successfully established. This mixed …
Noise Figure Optimization of Fully Integrated Inductively Degenerated SiGe HBT LNAs
MF Ibrahim - 2012 - library-archives.canada.ca
Abstract<? Pub Inc> Silicon germanium (SiGe) heterojunction bipolar transistors (HBTs)
have the properties of producing very low noise and high gain over a wide bandwidth …
have the properties of producing very low noise and high gain over a wide bandwidth …
Parameter extraction of heterojunction bipolar transistor from low-frequency noise and S-parameter measurements
A Penarier, SG Jarrix, M Perotin… - Semiconductor …, 2007 - iopscience.iop.org
The extraction of the equivalent circuit parameters for bipolar transistors is undertaken via
high-frequency S-parameter and low-frequency noise measurements. The extraction is …
high-frequency S-parameter and low-frequency noise measurements. The extraction is …