▪ Abstract New classes of Sn-containing group IV semiconductors are described. Novel CVD
routes lead to growth of a broad range of Ge1− y Sn y alloys and compounds directly on Si …

Semiconductor Materials presents physico-chemical, electronic, electrical, elastic,
mechanical, magnetic, optical, and other properties of a vast group of elemental, binary, and …

A five-level k→· p→ analysis is used to compute the principal effective-mass parameters at
k= 0 in diamond-and zinc-blende-type semiconductors. A semiempirical model is developed …

The E 0, E 0+ Δ 0, E 1, E 1+ Δ 1, E 0′, and E 2 optical transitions have been measured in
Ge 1− y Sn y alloys (y< 0.2) using spectroscopic ellipsometry and photoreflectance. The …

Electronegativity difference was redefined in Paper I of this series as a scaling parameter
which combines the concepts of valence and size differences. A procedure has been …

A comprehensive and detailed study of the composition dependence of lattice constants,
band gaps and band offsets has been performed for bulk Ge 1− x Sn x alloy in the full …

The compositional dependence of the lowest direct and indirect band gaps in Ge 1− y Sn y
alloys has been determined from room-temperature photoluminescence measurements …

Publisher Summary This chapter explores that qualitative or semi-quantitative
understanding of the factors determine hole mobilities. It discusses the results of numerical …

Publisher Summary This chapter discusses the quasi-germanium model, which gives a
consistent description of the behavior of both the electrons and holes in Hg 1—x Cd x Te …

A review is made of the principal properties of mercury telluride which is a member of a new
class of substances—zero-gap semiconductors. The factors responsible for the zero-gap …