The long dreamed 'quantum internet'would consist of a network of quantum nodes (solid-
state or atomic systems) linked by flying qubits, naturally based on photons, travelling over …

In order to fulfil the requirements of the information society there is a growing demand for
nanoelectronic devices with new or largely improved performances; these devices are …

Using rapid thermal annealing, we fabricated a series of InAs/GaAs quantum dot samples
with ground-state emission ranging from 1.05 eV to 1.35 eV. This set of annealed samples …

Photoluminescence (PL) spectroscopy with subwavelength lateral resolution has been
employed to probe individual localization centers in a thin InGaN/GaN quantum well …

A distribution function for localized carriers, f (E, T)= 1/(e (E− E a)/k B T+ τ tr/τ r), is obtained
by solving a rate equation, in which electrical carriers' generation, thermal escape, recapture …

By using the droplet epitaxy method, we succeed in fabricating the InAs quantum dots (QDs)
with the spatial density of 4× 10 10∕ cm 2 and an average lateral size of 20 nm on GaAs …

We study the impact of misfit dislocations on the luminescence from InAs quantum dots
(QDs) grown on Si substrates. Electron channeling contrast imaging is used together with …

We show that the use of modified droplet epitaxy allows to tune the wetting layer thickness in
GaAs quantum dot structures. Morphological observations demonstrate that the wetting layer …

Current prototypes of quantum-dot intermediate band solar cells suffer from voltage
reduction due to the existence of thermal carrier escape. An enlarged subbandgap EL would …

Photoluminescence from InAs quantum dots in a strained Ga 0.85 In 0.15 As quantum well is
investigated over a temperature range from 10 to 300 K using low intensity optical excitation …