Droplet epitaxy of semiconductor nanostructures for quantum photonic devices
The long dreamed 'quantum internet'would consist of a network of quantum nodes (solid-
state or atomic systems) linked by flying qubits, naturally based on photons, travelling over …
state or atomic systems) linked by flying qubits, naturally based on photons, travelling over …
Quantum dot nanostructures and molecular beam epitaxy
In order to fulfil the requirements of the information society there is a growing demand for
nanoelectronic devices with new or largely improved performances; these devices are …
nanoelectronic devices with new or largely improved performances; these devices are …
Temperature and excitation density dependence of the photoluminescence from annealed InAs/GaAs quantum dots
EC Le Ru, J Fack, R Murray - Physical Review B, 2003 - APS
Using rapid thermal annealing, we fabricated a series of InAs/GaAs quantum dot samples
with ground-state emission ranging from 1.05 eV to 1.35 eV. This set of annealed samples …
with ground-state emission ranging from 1.05 eV to 1.35 eV. This set of annealed samples …
Probing Individual Localization Centers in an Quantum Well
H Schömig, S Halm, A Forchel, G Bacher, J Off… - Physical review …, 2004 - APS
Photoluminescence (PL) spectroscopy with subwavelength lateral resolution has been
employed to probe individual localization centers in a thin InGaN/GaN quantum well …
employed to probe individual localization centers in a thin InGaN/GaN quantum well …
A model for steady-state luminescence of localized-state ensemble
A distribution function for localized carriers, f (E, T)= 1/(e (E− E a)/k B T+ τ tr/τ r), is obtained
by solving a rate equation, in which electrical carriers' generation, thermal escape, recapture …
by solving a rate equation, in which electrical carriers' generation, thermal escape, recapture …
Near room temperature droplet epitaxy for fabrication of InAs quantum dots
JS Kim, N Koguchi - Applied physics letters, 2004 - pubs.aip.org
By using the droplet epitaxy method, we succeed in fabricating the InAs quantum dots (QDs)
with the spatial density of 4× 10 10∕ cm 2 and an average lateral size of 20 nm on GaAs …
with the spatial density of 4× 10 10∕ cm 2 and an average lateral size of 20 nm on GaAs …
Non-radiative recombination at dislocations in InAs quantum dots grown on silicon
We study the impact of misfit dislocations on the luminescence from InAs quantum dots
(QDs) grown on Si substrates. Electron channeling contrast imaging is used together with …
(QDs) grown on Si substrates. Electron channeling contrast imaging is used together with …
Modified droplet epitaxy GaAs/AlGaAs quantum dots grown on a variable thickness wetting layer
S Sanguinetti, K Watanabe, T Tateno, M Gurioli… - Journal of crystal …, 2003 - Elsevier
We show that the use of modified droplet epitaxy allows to tune the wetting layer thickness in
GaAs quantum dot structures. Morphological observations demonstrate that the wetting layer …
GaAs quantum dot structures. Morphological observations demonstrate that the wetting layer …
Wide-bandgap InAs/InGaP quantum-dot intermediate band solar cells
Current prototypes of quantum-dot intermediate band solar cells suffer from voltage
reduction due to the existence of thermal carrier escape. An enlarged subbandgap EL would …
reduction due to the existence of thermal carrier escape. An enlarged subbandgap EL would …
Temperature dependence of the photoluminescence emission from InAs quantum dots in a strained Ga0. 85In0. 15As quantum well
DP Popescu, PG Eliseev, A Stintz… - … science and technology, 2003 - iopscience.iop.org
Photoluminescence from InAs quantum dots in a strained Ga 0.85 In 0.15 As quantum well is
investigated over a temperature range from 10 to 300 K using low intensity optical excitation …
investigated over a temperature range from 10 to 300 K using low intensity optical excitation …