The implementation of high‐efficiency and high‐resolution displays has been the focus of
considerable research interest. Recently, micro light‐emitting diodes (micro‐LEDs), which …

We report steady-state and time-resolved photoluminescence (TRPL) measurements on
individual GaN nanowires (⁠ 6–20 μ m in length, 30–940 nm in diameter) grown by a …

Electron emission spectroscopy was performed on metalorganic chemical vapor deposition
grown pn−-n+ junctions with p-thicknesses ranging from 50 to 300 nm, doped with [Mg] …

We applied time-resolved pump-probe spectroscopy based on free carrier absorption and
light diffraction on a transient grating for direct measurements of the carrier lifetime and …

Micro light-emitting diode (microLED) structures were modeled and validated with fabricated
devices to investigate p-type GaN (pGaN) contact size dependence on power output …

Diffusion lengths of photo-excited carriers along the c-direction were determined from
photoluminescence (PL) and cross-sectional cathodoluminescence (CL) measurements in p …

This paper presents an extensive literature review on Light-Emitting Diode (LED)
fundamentals and discusses the historical development of LEDs, focusing on the material …

The key electronic parameters of high-pressure-high-temperature and chemical-vapor-
deposition grown diamonds have been determined at interband (hν= 5.82 eV) or below …

To address the difference between the barrier height and the open circuit voltage of ZnSnN
2 Schottky barrier solar cells prepared with Ag as the contact metal by sputtering deposition …

Thin films of cadmium-incorporated ZnO (CZO) have been synthesized and investigated for
potential light detecting applications. Epitaxial, c-axis oriented growth of CZO films was …