[图书][B] Liquid phase epitaxy of electronic, optical and optoelectronic materials
P Capper, M Mauk - 2007 - books.google.com
Liquid-Phase Epitaxy (LPE) is a technique used in the bulk growth of crystals, typically in
semiconductor manufacturing, whereby the crystal is grown from a rich solution of the …
semiconductor manufacturing, whereby the crystal is grown from a rich solution of the …
Photoreflectance, photoluminescence, and microphotoluminescence study of optical transitions between delocalized and localized states in GaNAs, GaInNAs, and …
R Kudrawiec, M Latkowska, M Baranowski… - Physical Review B …, 2013 - APS
Optical transitions in as-grown and annealed GaN 0.02 As 0.98, Ga 0.95 In 0.05 N 0.02 As
0.98, and GaN 0.02 As 0.90 Sb 0.08 bulklike layers have been studied with photoreflectance …
0.98, and GaN 0.02 As 0.90 Sb 0.08 bulklike layers have been studied with photoreflectance …
Band structure and optical constants of GaAs1-xNx
The composition dependence of direct and indirect band gap energies, anti-symmetric gap,
valence band width, refractive index and high-frequency and static dielectric constants has …
valence band width, refractive index and high-frequency and static dielectric constants has …
Development of dilute nitride materials for mid-infrared diode lasers
A Krier, M De la Mare, PJ Carrington… - Semiconductor …, 2012 - iopscience.iop.org
The development of dilute nitride alloys for use in mid-infrared diode lasers operating in the
3–4 µm spectral range is described. The dilute nitrides are found to offer improved …
3–4 µm spectral range is described. The dilute nitrides are found to offer improved …
Growth and characterization of InAsN/GaAs dilute nitride semiconductor alloys for the midinfrared spectral range
We report the growth of InAsN onto GaAs substrates using nitrogen plasma source
molecular beam epitaxy. We describe the spectral properties of InAsN alloys with N-content …
molecular beam epitaxy. We describe the spectral properties of InAsN alloys with N-content …
Contactless electroreflectance of GaNyAs1− y/GaAs multi quantum wells: The conduction band offset and electron effective mass issues
R Kudrawiec, M Motyka, M Gladysiewicz… - Solid state …, 2006 - Elsevier
Interband transitions in GaNyAs1− y/GaAs multi quantum well (MQW) samples with y= 0.012
and 0.023 have been studied by contactless electroreflectance spectroscopy (CER). Optical …
and 0.023 have been studied by contactless electroreflectance spectroscopy (CER). Optical …
Strain and annealing temperature effects on the optical properties of GaNAs layers grown by molecular beam epitaxy
JJ Cabrera-Montealvo, LI Espinosa-Vega… - Thin Solid Films, 2022 - Elsevier
The ex-situ characterization of GaNAs/GaAs system grown by Molecular Beam Epitaxy with
two different GaNAs layer thicknesses and similar nitrogen concentration (% N) is presented …
two different GaNAs layer thicknesses and similar nitrogen concentration (% N) is presented …
Growth of dilute GaSbN layers by liquid-phase epitaxy
We report the growth of dilute GaSbN layers on GaSb substrates by liquid-phase epitaxy
using polycrystalline GaN as the source of nitrogen in the growth melt. Atomic force …
using polycrystalline GaN as the source of nitrogen in the growth melt. Atomic force …
Properties of dilute InAsN layers grown by liquid phase epitaxy
S Dhar, TD Das, M De la Mare, A Krier - Applied Physics Letters, 2008 - pubs.aip.org
We report on the liquid phase epitaxial growth of InAsN from indium rich solution. The
spectral properties of dilute bulk alloys containing N∼ 0.5% and which exhibit …
spectral properties of dilute bulk alloys containing N∼ 0.5% and which exhibit …
Stress evolution in GaAsN alloy films
M Reason, X Weng, W Ye, D Dettling… - Journal of applied …, 2005 - pubs.aip.org
We have investigated stress evolution in dilute nitride GaAs 1− x N x alloy films grown by
plasma-assisted molecular-beam epitaxy. For coherently strained films (x< 2.5%), a …
plasma-assisted molecular-beam epitaxy. For coherently strained films (x< 2.5%), a …