Brings the Band Structure of Carbon-Based Devices into the Limelight A shift to carbon is
positioning biology as a process of synthesis in mainstream engineering. Silicon is quickly …

The current at the onset of saturation in a metal-oxide-semiconductor field-effect transistor
(MOSFET) is shown to be limited by the drain velocity that increases toward its saturation …

This paper investigates the effect of threshold voltage on drain current for different channel
lengths and analyses the impact of short channel on threshold voltage for Silicon n-MOS at …

In this work, we have designed a Novel Top-Bottom Gated Junctionless (JL) Fin-Shaped
Field Effect Transistor (FinFET) Structure. The main idea of designing this structure is to …

In this paper, lower fin modulation is performed for a Novel 5nm Top Bottom Gated
Junctionless Fin shaped Field Effect Transistor (FinFET). The analysis is done for fin lengths …

The mobility and saturation velocity in the nanoscale metal oxide semiconductor field effect
transistor (MOSFET) are revealed to be ballistic; the former in a channel whose length is …

The present paper deals with the modeling of low‐dimensional transistors in the form of
metal–oxide–semiconductor field‐effect transistors aiming a compact model that may be …

Temperature Analysis of a Novel Stacked Oxide Top Bottom Gated Junctionless Fin-shaped
Field Effect Transistor (TBG JL FinFET) is described in this research paper. This …

A distance transformaZion DT) converts a: binary imeh, into an image where all backg:
ground piixeh have a value equal to the distance to the nearest foreground pixel. We …

The present paper deals with the modeling of silicon MOSFET in the variety of channel
range from submicron to nanoMOSFET aiming the study of the degradation and aging of …