The effect and nature of N–H complexes in the control of the dominant photoluminescence transitions in UV-hydrogenated GaInNAs
CR Brown, NJ Estes, VR Whiteside, B Wang… - RSC …, 2017 - pubs.rsc.org
Due to its 1 eV band gap and GaAs-matched lattice constant, GaInNAs has long been
considered for use in four-junction multi-junction solar cells; but, material quality issues have …
considered for use in four-junction multi-junction solar cells; but, material quality issues have …
Research on monolithic AlGaInP/AlGaInAs/GaInAs/Ge quadruple-junction solar cell for high efficiency lattice-matched tandem photovoltaic device
X Zhang, S Huang, J Liu, K Lin, Y Wang… - Applied Physics …, 2020 - iopscience.iop.org
Abstract Lattice-matched AlGaInP/AlGaInAs/GaInAs/GaInNAs (Sb)/Ge five-junction (5J) solar
cell can be expected to achieve a practical efficiency high as 36% under the air mass (AM0) …
cell can be expected to achieve a practical efficiency high as 36% under the air mass (AM0) …
Role of In in hydrogenation of N-related complexes in GaInNAs
T Mou, S Li, CR Brown, VR Whiteside… - ACS Applied …, 2019 - ACS Publications
The N-related isoelectronic centers in dilute nitrides act as localized states inside the band
gap. Here, hydrogenation is shown to reduce the number of defect levels. However, some …
gap. Here, hydrogenation is shown to reduce the number of defect levels. However, some …
The striking influence of rapid thermal annealing on InGaAsP grown by MBE: material and photovoltaic device
L Ji, M Tan, C Ding, K Honda, R Harasawa… - Journal of Crystal …, 2017 - Elsevier
Rapid thermal annealing (RTA) has been performed on InGaAsP solar cells with the
bandgap energy of 1 eV grown by molecular beam epitaxy. With the employment of RTA …
bandgap energy of 1 eV grown by molecular beam epitaxy. With the employment of RTA …
Improved performance of GaInNAs solar cell after UV-activated hydrogenation
M Fukuda, VR Whiteside, JC Keay… - 2015 IEEE 42nd …, 2015 - ieeexplore.ieee.org
While GaInNaAs has been earmarked as a possible candidate [1] for a 1 eV solar cell
material in a multi-junction solar it has not made a lot of traction. This is due primarily to …
material in a multi-junction solar it has not made a lot of traction. This is due primarily to …
Preliminary analysis of annealing impact on 1 eV GaNAsSb Solar Cells
Impact of annealing temperature, time and process gas on 1 eV GaNAsSb solar cells is
assessed. In situ and ex situ annealings are carried out in order to analyze their effect on the …
assessed. In situ and ex situ annealings are carried out in order to analyze their effect on the …
Radiation tolerance of GaAs1-xSbx solar cells: A candidate III-V system for space applications
H Ashfari, BK Durant, T Thrasher… - 2021 IEEE 48th …, 2021 - ieeexplore.ieee.org
The high radiation tolerance of GaAs0. 86Sb0. 14 based solar cells with a band gap suitable
for PV is demonstrated at the low intensity low temperature (LILT) conditions. This system …
for PV is demonstrated at the low intensity low temperature (LILT) conditions. This system …
The role of NH complexes in the control of localized center recombination in hydrogenated GaInNAs (Conference Presentation)
VR Whiteside, M Fukuda, NJ Estes… - Physics, Simulation …, 2017 - spiedigitallibrary.org
A significant improvement in the quality of dilute nitrides has recently led to the ability to
reveal depletion widths in excess of 1 μm at 1 eV [1]. The real viability of dilute nitrides for PV …
reveal depletion widths in excess of 1 μm at 1 eV [1]. The real viability of dilute nitrides for PV …