The growing demand for high density VLSI circuits and the exponential dependency of the
leakage current on the oxide thickness is becoming a major challenge in deep-submicron …

An optical RAM row access gate followed by a column address selector for wavelength-
division-multiplexing (WDM)-formatted words employing a single semiconductor optical …

In the age of scaled silicon technology to improve the functional efficiency of a CMOS
design, the device geometry and device parameters are constantly scaled. The major factors …

With ever increasing power density and temperature variations within high density VLSI
chips, it is very important to study the temperature effects on the devices in a compact way …

In this paper we present a novel 10T SRAM cell design with an inbuilt mechanism for charge
recycling to cut down the dynamic power budget. The read discharge power of a single …

There is an ever increasing need for running various multimedia and computer based
applications on a variety of popular digital systems. These applications continue to become …

Leakage power is a major issue for short channel devices. As the technology is shrinking (ie,
180nm, 90nm, 45nm. etc.) the leakage current is increasing very fast. So, several methods …

The advantages of simultaneous read and write operations for dual-port SRAM memory
cells are well known. In this paper two configurations of dual-port 8-Transistor Differential …

The demand for static random-access memory (SRAM) is increasing with large use of SRAM
in System On-Chip and high-performance VLSI circuits. The high-density VLSI circuits and …

In this letter, we present new architectural perspectives in optical static RAM configurations
by exploiting the wavelength dimension in address domain. We present a 2× 4 optical RAM …