Quantum dot opto-electronic devices
P Bhattacharya, S Ghosh… - Annu. Rev. Mater …, 2004 - annualreviews.org
▪ Abstract Highly strained semiconductors grow epitaxially on mismatched substrates in the
Stranski-Krastanow growth mode, wherein islands are formed after a few monolayers of …
Stranski-Krastanow growth mode, wherein islands are formed after a few monolayers of …
Quantum dot nanostructures and molecular beam epitaxy
In order to fulfil the requirements of the information society there is a growing demand for
nanoelectronic devices with new or largely improved performances; these devices are …
nanoelectronic devices with new or largely improved performances; these devices are …
Solid-state cavity-quantum electrodynamics with self-assembled quantum dots
JM Gerard - Single quantum dots: fundamentals, applications, and …, 2003 - Springer
In this contribution, the recent development of cavity-quantum electrodynamics experiments
in all semiconductor microcavities using self-assembled quantum dots as ''artificial atoms''is …
in all semiconductor microcavities using self-assembled quantum dots as ''artificial atoms''is …
Quantum-dot optoelectronic devices
P Bhattacharya, Z Mi - Proceedings of the IEEE, 2007 - ieeexplore.ieee.org
Self-organized In (Ga) As/Ga (Al) As quantum dots have emerged as useful nanostructures
that can be epitaxially grown and incorporated in the active region of devices. The near …
that can be epitaxially grown and incorporated in the active region of devices. The near …
Growth of highly strained GaInAs/GaAs quantum wells for 1.2 μm wavelength lasers
D Schlenker, T Miyamoto, Z Chen, F Koyama… - Journal of crystal …, 2000 - Elsevier
In this paper we present a successful growth of highly strained GaInAs/GaAs quantum wells
by low-pressure organometallic vapor-phase epitaxy using tertiarybutylarsine. The transition …
by low-pressure organometallic vapor-phase epitaxy using tertiarybutylarsine. The transition …
Vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots
SA Blokhin, NA Maleev, AG Kuzmenkov… - IEEE journal of …, 2006 - ieeexplore.ieee.org
Molecular beam epitaxy-grown 0.98-mum vertical-cavity surface-emitting lasers (VCSELs)
with a three-stack submonolayer (SML) InGaAs quantum-dot (QD) active region and fully …
with a three-stack submonolayer (SML) InGaAs quantum-dot (QD) active region and fully …
半导体量子点及其应用(Ⅰ)
赵凤瑷， 张春玲， 王占国 - 物理, 2004 - wuli.iphy.ac.cn
量子点, 又称" 人造原子", 它是纳米科学与技术研究的重要组成部分. 由于载流子在半导体量子点
中受到三维限制而具有的优异性能, 构成了量子器件和电路的基础, 在未来的纳米电子学 …
中受到三维限制而具有的优异性能, 构成了量子器件和电路的基础, 在未来的纳米电子学 …
Rate equation model for nonequilibrium operating conditions in a self-organized quantum-dot laser
H Huang, DG Deppe - IEEE journal of quantum electronics, 2001 - ieeexplore.ieee.org
A nonequilibrium rate equation model is presented and analyzed for the self-organized
quantum dot (QD) laser. The model assumes the QD zero dimensional levels are coupled to …
quantum dot (QD) laser. The model assumes the QD zero dimensional levels are coupled to …
Transverse mode control by etch-depth tuning in 1120-nm GaInAs/GaAs photonic crystal vertical-cavity surface-emitting lasers
Robust and tolerant single-transverse-mode photonic crystal GaInAs vertical-cavity surface-
emitting lasers are fabricated and investigated. Triangular lattice patterns of rectangular air …
emitting lasers are fabricated and investigated. Triangular lattice patterns of rectangular air …
Optical and impedance studies of pure and Ba-doped ZnS quantum dots
Chemical precipitation method using a high-boiling solvent is used to synthesize ZnS and
Ba-doped ZnS quantum dots. The presence of organic ligands in the prepared …
Ba-doped ZnS quantum dots. The presence of organic ligands in the prepared …