The ability to reverse the magnetization of nanomagnets by current injection has attracted
increased attention ever since the spin-transfer torque mechanism was predicted in 1996. In …

The electronic structure of non-magnetic low-dimensional materials can acquire a spin
structure due to the breaking of the inversion symmetry at the surface or interface. This so …

We demonstrate that valley polarization can be induced and controlled in semiconducting
single-layer transition-metal dichalcogenides by magnetic doping, which is important for …

Topological quantum materials represent a new class of matter with both exotic physical
phenomena and novel application potentials. Many Heusler compounds, which exhibit rich …

The generation of spin-polarized electrons at room temperature is an essential step in
developing semiconductor spintronic applications. To this end, we studied the electronic …

A one-atom-layer compound made of one monolayer of Tl and one-third monolayer of Pb on
a Si (111) surface having 3× 3 periodicity was found to exhibit a giant Rashba-type spin …

A peculiar Rashba effect is found at a point in the Brillouin zone, where the time-reversal
symmetry is broken, though this symmetry was believed to be a necessary condition for …

Spin-momentum locking is essential to the spin-split Fermi surfaces of inversion-symmetry
broken materials, which are caused by either Rashba-type or Zeeman-type spin-orbit …

We have performed high-resolution spin-and angle-resolved photoemission spectroscopy of
bismuth thin film on Si (111) to investigate the spin structure of surface states. Unlike the …

To exploit Rashba effect in a 2D electron gas on silicon surface for spin transport, it is
necessary to have surface reconstruction with spin-split metallic surface-state bands …