Epitaxial growth and layer-transfer techniques for heterogeneous integration of materials for electronic and photonic devices
The demand for improved electronic and optoelectronic devices has fuelled the
development of epitaxial growth techniques for single-crystalline semiconductors. However …
development of epitaxial growth techniques for single-crystalline semiconductors. However …
The 2018 GaN power electronics roadmap
H Amano, Y Baines, E Beam, M Borga… - Journal of Physics D …, 2018 - iopscience.iop.org
Gallium nitride (GaN) is a compound semiconductor that has tremendous potential to
facilitate economic growth in a semiconductor industry that is silicon-based and currently …
facilitate economic growth in a semiconductor industry that is silicon-based and currently …
GaN power integration technology and its future prospects
The planar nature of the GaN heterojunction devices provides extended dimensions for
implementing monolithic power integrated circuits. This article presents a comprehensive …
implementing monolithic power integrated circuits. This article presents a comprehensive …
Charge Storage Mechanism of Drain Induced Dynamic Threshold Voltage Shift in -GaN Gate HEMTs
The drain induced dynamic threshold voltage () shift of a-GaN gate HEMT with a Schottky
gate contact is investigated, and the underlying mechanisms are explained with a charge …
gate contact is investigated, and the underlying mechanisms are explained with a charge …
Normally-off C–H diamond MOSFETs with partial C–O channel achieving 2-kV breakdown voltage
Y Kitabayashi, T Kudo, H Tsuboi… - IEEE Electron …, 2017 - ieeexplore.ieee.org
Diamond has unique physical properties, which show great promise for applications in the
next generation power devices. Hydrogen-terminated (CH) diamond metal-oxide …
next generation power devices. Hydrogen-terminated (CH) diamond metal-oxide …
Multi-channel nanowire devices for efficient power conversion
Nanowire-based devices can potentially be of use in a variety of electronic applications,
from ultrascaled digital circuits to 5G communication networks. However, the devices are …
from ultrascaled digital circuits to 5G communication networks. However, the devices are …
Dynamic on-resistance in GaN power devices: Mechanisms, characterizations, and modeling
S Yang, S Han, K Sheng… - IEEE Journal of Emerging …, 2019 - ieeexplore.ieee.org
Gallium nitride (GaN) power devices enable power electronic systems with enhanced power
density and efficiency. Dynamic on-resistance (R ON) degradation (or current collapse) …
density and efficiency. Dynamic on-resistance (R ON) degradation (or current collapse) …
Breakdown enhancement and current collapse suppression by high-resistivity GaN cap layer in normally-off AlGaN/GaN HEMTs
In this letter, a device structure of high-resistivity-cap-layer HEMT (HRCL-HEMT) is
developed for normally-off p-GaN gate HEMT toward high breakdown voltage and low …
developed for normally-off p-GaN gate HEMT toward high breakdown voltage and low …
GaN power IC technology on p-GaN gate HEMT platform
GaN power ICs provide an elegant solution for high-frequency power switching applications.
This paper will first discuss the GaN power integration platform, which requires not only a …
This paper will first discuss the GaN power integration platform, which requires not only a …
E-Mode pn Junction/AlGaN/GaN (PNJ) HEMTs
In this work, we demonstrate a GaN-based junction gate (PNJ) HEMT featuring an-GaN/-
GaN/AlGaN/GaN gate stack. Compared to the more conventional-GaN gate HEMT with a …
GaN/AlGaN/GaN gate stack. Compared to the more conventional-GaN gate HEMT with a …