[HTML][HTML] III-V compound SC for optoelectronic devices
S Mokkapati, C Jagadish - Materials Today, 2009 - Elsevier
III-V compound semiconductors (SC) have played a crucial role in the development of
optoelectronic devices for a broad range of applications. Major applications of InP or GaAs …
optoelectronic devices for a broad range of applications. Major applications of InP or GaAs …
GaInNAs long-wavelength lasers: progress and challenges
JS Harris Jr - Semiconductor science and technology, 2002 - iopscience.iop.org
Research to realize long-wavelength, GaInNAs quantum well lasers has been intense in the
past three years. The results have been very promising considering the relative immaturity …
past three years. The results have been very promising considering the relative immaturity …
Band anticrossing in highly mismatched III–V semiconductor alloys
J Wu, W Shan, W Walukiewicz - Semiconductor Science and …, 2002 - iopscience.iop.org
In this paper we review the basic theoretical aspects as well as some important experimental
results of the band anticrossing effects in highly electronegativity-mismatched …
results of the band anticrossing effects in highly electronegativity-mismatched …
Band engineering in dilute nitride and bismide semiconductor lasers
Highly mismatched semiconductor alloys such as GaN x As 1− x and GaBi x As 1− x have
several novel electronic properties, including a rapid reduction in energy gap with …
several novel electronic properties, including a rapid reduction in energy gap with …
Electronic properties and enhanced photocatalytic performance of van der Waals heterostructures of ZnO and Janus transition metal dichalcogenides
Vertical stacking of two-dimensional materials into layered van der Waals heterostructures
has recently been considered as a promising candidate for photocatalytic and optoelectronic …
has recently been considered as a promising candidate for photocatalytic and optoelectronic …
Current injection efficiency of InGaAsN quantum-well lasers
The concept of below-threshold and above-threshold current injection efficiency of quantum
well (QW) lasers is clarified. The analysis presented here is applied to the current injection …
well (QW) lasers is clarified. The analysis presented here is applied to the current injection …
Electronic properties of ga (in) nas alloys
IA Buyanova, WM Chen, B Monemar - Materials Research Society …, 2001 - cambridge.org
A brief review on the present knowledge of the electronic properties of the Ga (In) NAs
ternary and quaternary alloys is given mainly from an experimental perspective. The …
ternary and quaternary alloys is given mainly from an experimental perspective. The …
Effect of temperature on the optical properties of (InGa)(AsN)/GaAs single quantum wells
A Polimeni, M Capizzi, M Geddo, M Fischer… - Applied Physics …, 2000 - pubs.aip.org
In x Ga 1− x As 1− y N y/GaAs single quantum wells emitting at room temperature in the
wavelength range λ=(1.3–1.55) μ m have been studied by photoluminescence (PL). By …
wavelength range λ=(1.3–1.55) μ m have been studied by photoluminescence (PL). By …
Conduction band offset and electron effective mass in GaInNAs/GaAs quantum-well structures with low nitrogen concentration
Z Pan, LH Li, YW Lin, BQ Sun, DS Jiang… - Applied Physics …, 2001 - pubs.aip.org
We have investigated the optical transitions in Ga1yInyNxAs1x/GaAs single and multiple
quantum wells using photovoltaic measurements at room temperature. From a theoretical fit …
quantum wells using photovoltaic measurements at room temperature. From a theoretical fit …
Band structure of highly mismatched semiconductor alloys: Coherent potential approximation
J Wu, W Walukiewicz, EE Haller - Physical Review B, 2002 - APS
The many-impurity Anderson model is applied to compound semiconductor alloys in which
metallic anion atoms are partially substituted by highly electronegative atoms at low …
metallic anion atoms are partially substituted by highly electronegative atoms at low …