The rapid development of information technology has led to urgent requirements for high
efficiency and ultralow power consumption. In the past few decades, neuromorphic …

Resistive switching effect in transition metal oxide (TMO) based material is often associated
with the valence change mechanism (VCM). Typical modeling of valence change resistive …

Ferroelectric materials have shown great value in the modern semiconductor industry and
are considered important function materials due to their high dielectric constant and tunable …

Interest in resistance switching is currently growing apace. The promise of novel high‐
density, low‐power, high‐speed nonvolatile memory devices is appealing enough, but …

Neuromorphic architectures are hardware systems that aim to use the principles of neural
function for their basis of operation. Their goal is to harness biologically inspired concepts …

Resistive switching memories (RRAMs) are attractive for replacement of conventional flash
in the future. Although different switching materials have been reported; however, low …

Here in, we introduce a Pt/Ta 2 O 5/HfO 2/TiN memristor with enhanced resistive switching
behavior, these conductive effects were induced by inserting a HfO 2 layer. We demonstrate …

Resistive switching offers a promising route to universal electronic memory, potentially
replacing current technologies that are approaching their fundamental limits. In many cases …

We studied the pseudo-homeothermic synaptic behaviors by integrating complimentary
metal–oxide–semiconductor-compatible materials (hafnium oxide, aluminum oxide, and …

In recent years, the emergence of memory devices, especially resistive random-access
memories (RRAM), has been a front-runner in many technological applications. This is due …