Abstract Trivalent lanthanide (Ln 3+) ions doped semiconductor nanomaterials have
recently attracted considerable attention owing to their distinct optical properties and their …

While InGaN/GaN blue and green light-emitting diodes (LEDs) are commercially available,
the search for an efficient red LED based on GaN is ongoing. The realization of this LED is …

Advances in lighting and quantum computing will require new degrees of control over the
emission of photons, where localized defects and the quantum confinement of carriers can …

Using combined excitation emission spectroscopy, we performed a comparative study of
europium ions in GaN in samples that have been in situ doped during interrupted growth …

Thin films of pure and dysprosium doped (1, 2, 3 and 5 at. wt%) copper oxide (Dy-CuO) are
deposited onto p-silicon (1 0 0) substrate using pulsed laser deposition technique under …

We have studied the epitaxial growth and photoluminescent (PL) properties of Eu 3+-doped
ZnO layers in correlation with structural analyses. Incorporation of Eu 3+ ions into a ZnO host …

Absorption and fluorescence spectra observed between 450 and 750 nm at 85 K and room
temperature (300 K) are reported for Eu 3+(4f 6) in single-crystal Czochralski-grown garnet …

Magnetic semiconductors with coupled magnetic and electronic properties are of high
technological and fundamental importance. Rare-earth elements can be used to introduce …

Eu ions have been doped into GaN in order to achieve red luminescence under current
injection, where coupling between the Eu ions and intrinsic defects such as vacancies are …

The development of efficient electrically driven color-tunable solid-state light sources will
enable new capabilities in lighting and display technologies. Although alternative light …