Recent advances and future prospects for memristive materials, devices, and systems
Memristive technology has been rapidly emerging as a potential alternative to traditional
CMOS technology, which is facing fundamental limitations in its development. Since oxide …
CMOS technology, which is facing fundamental limitations in its development. Since oxide …
Nanosheet field effect transistors-A next generation device to keep Moore's law alive: An intensive study
Incessant downscaling of feature size of multi-gate devices such as FinFETs and gate-all-
around (GAA) nanowire (NW)-FETs leads to unadorned effects like short channel effects …
around (GAA) nanowire (NW)-FETs leads to unadorned effects like short channel effects …
Design insights of nanosheet FET and CMOS circuit applications at 5-nm technology node
VB Sreenivasulu, V Narendar - IEEE Transactions on Electron …, 2022 - ieeexplore.ieee.org
In this article, FinFET, vertically stacked gate-all-around (GAA) nanowire (NW), and
nanosheet (NS) FETs performance are estimated with equal effective channel widths () at …
nanosheet (NS) FETs performance are estimated with equal effective channel widths () at …
Miniaturization of CMOS
HH Radamson, X He, Q Zhang, J Liu, H Cui, J Xiang… - Micromachines, 2019 - mdpi.com
When the international technology roadmap of semiconductors (ITRS) started almost five
decades ago, the metal oxide effect transistor (MOSFET) as units in integrated circuits (IC) …
decades ago, the metal oxide effect transistor (MOSFET) as units in integrated circuits (IC) …
Soft-lock drawing of super-aligned carbon nanotube bundles for nanometre electrical contacts
The assembly of single-walled carbon nanotubes (CNTs) into high-density horizontal arrays
is strongly desired for practical applications, but challenges remain despite myriads of …
is strongly desired for practical applications, but challenges remain despite myriads of …
Benchmarking of FinFET, nanosheet, and nanowire FET architectures for future technology nodes
Nanosheet (NS) and nanowire (NW) FET architectures scaled to a gate length (LG) of 16 nm
and below are benchmarked against equivalent FinFETs. The device performance is …
and below are benchmarked against equivalent FinFETs. The device performance is …
Nanowire & nanosheet FETs for ultra-scaled, high-density logic and memory applications
A Veloso, T Huynh-Bao, P Matagne, D Jang… - Solid-State …, 2020 - Elsevier
We report on vertically stacked lateral nanowires (NW)/nanosheets (NS) gate-all-around
(GAA) FET devices as promising candidates to obtain a better power-performance metric for …
(GAA) FET devices as promising candidates to obtain a better power-performance metric for …
An intensive study of tree-shaped JL-NSFET: digital and analog/RF perspective
This manuscript for the first time presents the digital and analog/RF performance analysis for
novel Tree-shaped Junctionless Nanosheet (NS) FET. An additional inter-bridge (IB) …
novel Tree-shaped Junctionless Nanosheet (NS) FET. An additional inter-bridge (IB) …
Optimization of design space for vertically stacked junctionless nanosheet FET for analog/RF applications
This paper investigates the various device dimensions such as gate length (Lg), nanosheet
thickness (TNS), and nanosheet width to optimize the design space for vertically stacked …
thickness (TNS), and nanosheet width to optimize the design space for vertically stacked …
Characteristics of stacked gate-all-around Si nanosheet MOSFETs with metal sidewall source/drain and their impacts on CMOS circuit properties
In this brief, we computationally examine electrical characteristics of stacked gate-all-around
Si nanosheet MOSFETs (GAA NS-FETs) with and without metal sidewall (MSW) …
Si nanosheet MOSFETs (GAA NS-FETs) with and without metal sidewall (MSW) …