Silicon and silicon germanium are the archetypical elemental and alloy semiconductor
materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of …

Diffusion and activation of n-type dopants in Ge are discussed with particular emphasis on
shallow junction formation. It is shown that both the increase of dopant diffusivity and the …

This review concerns the concept of multi-excitation entropy (MEE) and its consequences.
When a fluctuation involving a large number of excitations occurs, for example, when a large …

Diffusion experiments of phosphorus (P), arsenic (As), and antimony (Sb) in high purity
germanium (Ge) were performed at temperatures between 600 and 920 C⁠. Secondary ion …

A promising and practicable catalyst is the key challenge for industrial perspective to
promote photocatalytic nitrogen fixation. In this study, a new 0D/2D heterojunction, oxygen …

The diffusion of self-atoms and n-type dopants such as phosphorus, arsenic, and antimony
in germanium was studied by means of isotopically controlled multilayer structures doped …

1" centration for the carriers, implanting a dose of an n-type dopant species into the Ge, and
selecting the dose to corre spond to a fraction of the target carrier concentration. Ther mal …

257/E21. 336 A method includes epitaxially growing a germanium (Ge) layer onto a Ge
Substrate and incorporating a compensating species with a compensating atomic radius into …

Defects in semiconductors have been studied for many years, in many cases with a view
toward controlling their behaviour through various forms of “defect engineering”. For …

We report experiments on the impact of 2.5 MeV proton irradiation on self-diffusion and
dopant diffusion in germanium (Ge). Self-diffusion under irradiation reveals an unusual …