Millimeter-wave phased array antenna integrated with the industry design in 5G/B5G smartphones

X Xia, C Yu, F Wu, ZH Jiang, YL Li… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
In this communication, a dual-polarized millimeter-wave (mmWave) phased array antenna is
proposed for the fifth-generation (5G)/B5G smartphones. The configuration of the antenna …

A 205–273-GHz frequency multiplier chain (× 6) with 9-dBm output power and 1.92% DC-to-RF efficiency in 0.13-µm SiGe BiCMOS

Z Li, J Chen, D Tang, R Zhou… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
This article presents a 205–273-GHz wideband frequency multiplier chain (FMC) in a 0.13-
SiGe BiCMOS technology with/500 GHz. The proposed FMC consists of a-band input …

Millimeter-wave±45° dual linearly polarized end-fire phased array antenna for 5G/B5G mobile terminals

X Xia, F Wu, C Yu, ZH Jiang, R Lu… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
In this article, a millimeter-wave (mmWave) endfire phased array antenna with±45° linear
polarizations is proposed for fifth generation (5G)/B5G mobile communications. The …

A wideband balanced amplifier using edge-coupled quadrature couplers in 0.13-μm SiGe HBT technology

L Chen, L Chen, H Zhu… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
In this work, a wideband millimeter-wave (mm-wave) power amplifier (PA) is reported. To
provide excellent input/output impedance matching across broadband, sufficient output …

A 28/38 GHz dual-band power amplifier for 5G communication

K Ding, DMW Leenaerts, H Gao - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
This work presents a 28/38 GHz dual-band power amplifier (PA) for fifth-generation (5G)
communication. In this work, a T-topology-matching network is proposed at the output for its …

A 220-GHz sliding-IF quadrature transmitter and receiver chipset for high data rate communication in 0.13-µm SiGe BiCMOS

Z Li, J Chen, H Li, J Yu, Y Lu, R Zhou… - IEEE Journal of Solid …, 2023 - ieeexplore.ieee.org
This article presents a fully integrated 220 GHz sliding-intermediate frequency (sliding-IF)
quadrature transmitter (Tx) and receiver (Rx) chipset supporting high-order modulation …

A 4.9–7.1-GHz High-Efficiency Post-Matching GaN Front-End Module for Wi-Fi 7 Application

G Lv, W Chen, L Chen… - IEEE Journal of Solid …, 2023 - ieeexplore.ieee.org
This article presents a modified transmit/receive (T/R) front-end module (FEM) architecture
with improved transmitter (TX) efficiency. Single-pole double-throw (SPDT) switch is …

A 26/38-GHz dual-band filtering balanced power amplifier MMIC for 5G mobile communications

X Xia, Z Wang, Z Li, S Zheng, D Tang… - IEEE Microwave and …, 2023 - ieeexplore.ieee.org
This letter presents a 26/38-GHz dual-band filtering balanced power amplifier (PA) using
100-nm GaAs process. Dual-band branch-line couplers are proposed for the balanced PA …

A Gallium Nitride (GaN) Doherty power amplifier chip design based on series RC stability network

CK Li, XW Zhu, RJ Liu, L Zhang - International Journal of Circuit …, 2024 - Wiley Online Library
This paper presents Doherty power amplifier (DPA) based on gallium nitride (GaN)
technology, incorporating a parallel grounded network with series RC elements in front of …

A Ku-band CMOS balanced driver amplifier with transformer-based notch filter for SATCOM phased arrays

M Yang, D Zhao, X You - … on Circuits and Systems II: Express …, 2023 - ieeexplore.ieee.org
This brief presents a Ku-band balanced driver amplifier (BDA) for SATCOM phased arrays.
To facilitate a flexible and low-loss coupler design, the non-correlation between the coupling …