Wet-chemical etching of GaAs (211) B wafers for controlling the surface properties
Substrate surface plays an important role to achieve high performance infrared devices and
high-quality film layers. GaAs (211) B wafers were intensively used in infrared detector …
high-quality film layers. GaAs (211) B wafers were intensively used in infrared detector …
[HTML][HTML] Characterization of gallium arsenide X-ray mesa pin photodiodes at room temperature
Two GaAs mesa p+-i-n+ photodiodes intended for photon counting X-ray spectroscopy,
having an i layer thickness of 7 μm and diameter of 200 μm, have been characterized …
having an i layer thickness of 7 μm and diameter of 200 μm, have been characterized …
Temperature dependent characterization of gallium arsenide X-ray mesa pin photodiodes
Electrical characterization of two GaAs p+-in+ mesa X-ray photodiodes over the temperature
range 0 C to 120 C together with characterization of one of the diodes as an X-ray detector …
range 0 C to 120 C together with characterization of one of the diodes as an X-ray detector …
Analog Frontend Circuits for Avalanche Photodiodes
SMA Auckloo - 2016 - etheses.whiterose.ac.uk
The aims of this work is to design low noise electronics for optical sensing and X‐ray
spectroscopy using Sheffield‐grown Avalanche photodiodes (APD). A transimpedance …
spectroscopy using Sheffield‐grown Avalanche photodiodes (APD). A transimpedance …