Defects and aliovalent doping engineering in electroceramics
Y Feng, J Wu, Q Chi, W Li, Y Yu, W Fei - Chemical reviews, 2020 - ACS Publications
Since the positive influences of defects on the performance of electroceramics were
discovered, investigations concerning on defects and aliovalent doping routes have grown …
discovered, investigations concerning on defects and aliovalent doping routes have grown …
Nanowire solar cells
The nanowire geometry provides potential advantages over planar wafer-based or thin-film
solar cells in every step of the photoconversion process. These advantages include reduced …
solar cells in every step of the photoconversion process. These advantages include reduced …
Si and SiGe nanowire for micro-thermoelectric generator: a review of the current state of the art
Y Li, G Wang, M Akbari-Saatlu, M Procek… - Frontiers in …, 2021 - frontiersin.org
In our environment, the large availability of wasted heat has motivated the search for
methods to harvest heat. As a reliable way to supply energy, SiGe has been used for …
methods to harvest heat. As a reliable way to supply energy, SiGe has been used for …
Colloquium: Structural, electronic, and transport properties of silicon nanowires
R Rurali - Reviews of Modern Physics, 2010 - APS
In this Colloquium the theory of silicon nanowires is reviewed. Nanowires with diameters
below 10 nm are the focus, where quantum effects become important and the properties …
below 10 nm are the focus, where quantum effects become important and the properties …
Direct imaging of single Au atoms within GaAs nanowires
Incorporation of catalyst atoms during the growth process of semiconductor nanowires
reduces the electron mean free path and degrades their electronic properties. Aberration …
reduces the electron mean free path and degrades their electronic properties. Aberration …
Direct comparison of catalyst-free and catalyst-induced GaN nanowires
GaN nanowires have been grown by molecular beam epitaxy either catalyst-free or catalyst-
induced by means of Ni seeds. Under identical growth conditions of temperature and V/III …
induced by means of Ni seeds. Under identical growth conditions of temperature and V/III …
[图书][B] Sintering: mechanisms of convention nanodensification and field assisted processes
R Castro, K Van Benthem - 2012 - books.google.com
Sintering process studies have re-emerged strongly in the past decade due to extensive
discussions about the stabilization of nanoparticles and nanostructures, and the …
discussions about the stabilization of nanoparticles and nanostructures, and the …
Nucleation mechanisms of epitaxial GaN nanowires: Origin of their self-induced formation and initial radius
V Consonni, M Knelangen, L Geelhaar, A Trampert… - Physical Review B …, 2010 - APS
The formation mechanisms of epitaxial GaN nanowires grown within a self-induced
approach by molecular-beam epitaxy have been investigated at the onset of the nucleation …
approach by molecular-beam epitaxy have been investigated at the onset of the nucleation …
Direct observation of dopant atom diffusion in a bulk semiconductor crystal enhanced by a large size mismatch
Diffusion is one of the fundamental processes that govern the structure, processing, and
properties of materials and it plays a crucial role in determining device lifetimes. However …
properties of materials and it plays a crucial role in determining device lifetimes. However …
Direct observation of single dopant atom in light-emitting phosphor of β-SiAlON: Eu2+
Rare-earth doped nitride attracts considerable attention because of its application as a light-
emitting phosphor. The atomic site of dopants in a crystal is important for the development of …
emitting phosphor. The atomic site of dopants in a crystal is important for the development of …