On a scalable silicon technology platform, we demonstrate photodetectors matching or even
surpassing state-of-the-art III–V devices. As key components in high-speed optoelectronics …

A light-trapping-structure vertical Ge photodetector (PD) is demonstrated. In the scheme, a 3
μm radius Ge mesa is fabricated to constrain the optical signal in the circular absorption …

This study reports the bandgap engineering of a Ge epitaxial layer on Si to tune the
operating wavelength of optical intensity modulators and photodetectors in the C (1.530 …

Recently, silicon photonics foundries started providing access to new dielectric stacks which
can be utilized to reduce optical I/O losses. For example, in a hybrid c-Si/SiN platform …

By the pulsed, heterodyned, and modulated laser illuminations, the impulse and noise
responses of O-band germanium (Ge) pin waveguide photodetector (WPD) with different …

Silicon photonics has become an industrial reality for datacom applications. Nevertheless,
as Si suffers from a low electro-optic effect, commercial modulators are few-mm long. The …

We present an optical phased array parameter analysis for automotive and handheld device
applications and preliminary results from a 1× 16 silicon optical phased array using pin …

We propose and numerically demonstrate an 800 Gbps silicon photonic transmitter with sub-
decibel surface-normal optical interfaces. The silicon photonic transmitter is composed of …

Optical Phased Array for 905-nm LIDAR applications integrated on 300mm Si-Photonic
Platform Page 1 Optical Phased Array for 905-nm LIDAR applications integrated on 300mm …

We report local nitride-stressor engineering in combination with quantum-size tunability in
Ge quantum dots (QDs) for tailoring photoluminescence (PL) wavelength and exciton …