Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices

F Roccaforte, P Fiorenza, G Greco, RL Nigro… - Microelectronic …, 2018 - Elsevier
Among the wide band gap (WBG) semiconductors, silicon carbide (4H-SiC) and gallium
nitride (GaN) are nowadays recognized as outstanding materials for the future of power …

Advanced processing for mobility improvement in 4H-SiC MOSFETs: A review

M Cabello, V Soler, G Rius, J Montserrat… - Materials Science in …, 2018 - Elsevier
This paper reviews advanced gate dielectric processes for SiC MOSFETs. The poor quality
of the SiO 2/SiC interface severely limits the value of the channel field-effect mobility …

Machine learning aided device simulation of work function fluctuation for multichannel gate-all-around silicon nanosheet MOSFETs

C Akbar, Y Li, WL Sung - IEEE Transactions on Electron …, 2021 - ieeexplore.ieee.org
A machine learning (ML) aided device simulation of work function fluctuation (WKF) for 3-D
multichannel gate-all-around silicon nanosheet MOSFET is presented. To establish the ML …

Bias temperature instability in SiC metal oxide semiconductor devices

C Yang, S Wei, D Wang - Journal of Physics D: Applied Physics, 2021 - iopscience.iop.org
Although silicon carbide (SiC) metal oxide semiconductor field-effect transistors (MOSFETs)
are commercially available, bias temperature instability (BTI) defined as shifts in V th in SiC …

A Critical review on reliability and short circuit robustness of silicon carbide power MOSFETs

S Sreejith, J Ajayan, SB Devasenapati, B Sivasankari… - Silicon, 2023 - Springer
Superior electrical and physical properties of SiC (Silicon Carbide) make them ideal for
various high voltage, high frequency and high power electronic applications. When …

Comparative study of hall effect mobility in inversion layer of 4H-SiC MOSFETs with nitrided and phosphorus-doped gate oxides

M Noguchi, T Watanabe, H Watanabe… - … on Electron Devices, 2021 - ieeexplore.ieee.org
In this study, the inversion layer mobility characteristics in Si-face 4H silicon carbide (SiC)
metal-oxide-semiconductor field-effect transistors (MOSFETs) with nitrided and phosphorus …

New trends in high voltage MOSFET based on wide band gap materials

P Godignon, V Soler, M Cabello… - 2017 international …, 2017 - ieeexplore.ieee.org
Recent advances and new trends in high voltage SiC based MOSFETs are analyzed. The
main focus is done on design optimization strategies for reducing the on-state resistance …

A Review on Gate Oxide Failure Mechanisms of Silicon Carbide Semiconductor Devices

J Li, A Shekhar, WD Van Driel… - IEEE Transactions on …, 2024 - ieeexplore.ieee.org
In this article, we provide a comprehensive review of defect formation at the atomic level in
interfaces and gate oxides, focusing on two primary defect types: interface traps and oxide …

Processing issues in SiC and GaN power devices technology: the cases of 4H-SiC planar MOSFET and recessed hybrid GaN MISHEMT

F Roccaforte, G Greco… - 2018 International …, 2018 - ieeexplore.ieee.org
This paper aims to give a short overview on some relevant processing issues existing in SiC
and GaN power devices technology. The main focus is put on the importance of the channel …

Device parameter prediction for GAA junctionless nanowire FET using ANN approach

A Raj, SK Sharma - Microelectronics Journal, 2024 - Elsevier
The primary objective of this study is to investigate the potential of artificial neural network
(ANN) for predicting the short-channel effect parameters and current-voltage curve in gate …