Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices
Among the wide band gap (WBG) semiconductors, silicon carbide (4H-SiC) and gallium
nitride (GaN) are nowadays recognized as outstanding materials for the future of power …
nitride (GaN) are nowadays recognized as outstanding materials for the future of power …
Advanced processing for mobility improvement in 4H-SiC MOSFETs: A review
This paper reviews advanced gate dielectric processes for SiC MOSFETs. The poor quality
of the SiO 2/SiC interface severely limits the value of the channel field-effect mobility …
of the SiO 2/SiC interface severely limits the value of the channel field-effect mobility …
Machine learning aided device simulation of work function fluctuation for multichannel gate-all-around silicon nanosheet MOSFETs
A machine learning (ML) aided device simulation of work function fluctuation (WKF) for 3-D
multichannel gate-all-around silicon nanosheet MOSFET is presented. To establish the ML …
multichannel gate-all-around silicon nanosheet MOSFET is presented. To establish the ML …
Bias temperature instability in SiC metal oxide semiconductor devices
C Yang, S Wei, D Wang - Journal of Physics D: Applied Physics, 2021 - iopscience.iop.org
Although silicon carbide (SiC) metal oxide semiconductor field-effect transistors (MOSFETs)
are commercially available, bias temperature instability (BTI) defined as shifts in V th in SiC …
are commercially available, bias temperature instability (BTI) defined as shifts in V th in SiC …
A Critical review on reliability and short circuit robustness of silicon carbide power MOSFETs
Superior electrical and physical properties of SiC (Silicon Carbide) make them ideal for
various high voltage, high frequency and high power electronic applications. When …
various high voltage, high frequency and high power electronic applications. When …
Comparative study of hall effect mobility in inversion layer of 4H-SiC MOSFETs with nitrided and phosphorus-doped gate oxides
M Noguchi, T Watanabe, H Watanabe… - … on Electron Devices, 2021 - ieeexplore.ieee.org
In this study, the inversion layer mobility characteristics in Si-face 4H silicon carbide (SiC)
metal-oxide-semiconductor field-effect transistors (MOSFETs) with nitrided and phosphorus …
metal-oxide-semiconductor field-effect transistors (MOSFETs) with nitrided and phosphorus …
New trends in high voltage MOSFET based on wide band gap materials
P Godignon, V Soler, M Cabello… - 2017 international …, 2017 - ieeexplore.ieee.org
Recent advances and new trends in high voltage SiC based MOSFETs are analyzed. The
main focus is done on design optimization strategies for reducing the on-state resistance …
main focus is done on design optimization strategies for reducing the on-state resistance …
A Review on Gate Oxide Failure Mechanisms of Silicon Carbide Semiconductor Devices
In this article, we provide a comprehensive review of defect formation at the atomic level in
interfaces and gate oxides, focusing on two primary defect types: interface traps and oxide …
interfaces and gate oxides, focusing on two primary defect types: interface traps and oxide …
Processing issues in SiC and GaN power devices technology: the cases of 4H-SiC planar MOSFET and recessed hybrid GaN MISHEMT
F Roccaforte, G Greco… - 2018 International …, 2018 - ieeexplore.ieee.org
This paper aims to give a short overview on some relevant processing issues existing in SiC
and GaN power devices technology. The main focus is put on the importance of the channel …
and GaN power devices technology. The main focus is put on the importance of the channel …
Device parameter prediction for GAA junctionless nanowire FET using ANN approach
The primary objective of this study is to investigate the potential of artificial neural network
(ANN) for predicting the short-channel effect parameters and current-voltage curve in gate …
(ANN) for predicting the short-channel effect parameters and current-voltage curve in gate …