Strain-driven valley-dependent Berry phase effects and topological transitions in Janus SVGeN2 monolayer
J Zhao, Y Qi, C Yao, H Zeng - Applied Physics Letters, 2024 - pubs.aip.org
The manipulation of valley-dependent properties in two-dimensional (2D) materials is
intriguing for developing valleytronics. Using first-principles calculations, we explore valley …
intriguing for developing valleytronics. Using first-principles calculations, we explore valley …
Intrinsic ferrovalley non-Janus with large valley polarization and nonvolatile reversible control of the anomalous valley Hall effect in multiferroic …
J Luo, H Meng, XX Xue, KQ Chen, LM Tang - Physical Review B, 2024 - APS
Ferrovalley (FV) materials are promising for practical applications in valley electronics due to
their spontaneous valley polarization, and the control of the anomalous valley Hall effect …
their spontaneous valley polarization, and the control of the anomalous valley Hall effect …
Electrical Control of the Valley–Layer Hall Effect in Ferromagnetic Bilayer Lattices
H Cheng, H Chen, G Hu, X Yuan, J Ren… - The Journal of Physical …, 2024 - ACS Publications
The layertronics based on the layer degree of freedom are of essential significance for the
construction and application of new-generation electronic devices. Although the Hall layer …
construction and application of new-generation electronic devices. Although the Hall layer …
Nonvolatile control of valley related properties and valley-contrasting transport in multiferroic van der Waals heterostructures
Y Qi, J Zhao, H Zeng - Applied Physics Letters, 2024 - pubs.aip.org
It is highly desirable to tune valley-related property through reversible and electrically
nonvolatile methods. Taking the VSiGeP 4/Al 2 S 3 heterostructure as an example, we …
nonvolatile methods. Taking the VSiGeP 4/Al 2 S 3 heterostructure as an example, we …
Tunable valley states in two-dimensional ScBr2
Y Huangfu, P Liu, D Li, C Liu, H Lu, G Zhang - Applied Physics Letters, 2024 - pubs.aip.org
Effective manipulation of valley degrees of freedom can offer significant opportunities for
both fundamental research and practical applications. In this work, based on the first …
both fundamental research and practical applications. In this work, based on the first …
Reversible nonvolatile control of the anomalous valley Hall effect in two-dimensional multiferroic materials based on GdGe 2
X Li, J Li, Z Gao, Z Niu, X Bi, J Gao, T Cao… - Journal of Materials …, 2024 - pubs.rsc.org
Effectively controlling the anomalous valley Hall (AVH) effect is vital for the application of
valleytronics. Herein, we propose a scheme for achieving reversible nonvolatile electrical …
valleytronics. Herein, we propose a scheme for achieving reversible nonvolatile electrical …
Anomalous valley Hall effect in two-dimensional valleytronic materials
H Chen, X Yuan, J Ren - Chinese Physics B, 2024 - iopscience.iop.org
The anomalous valley Hall effect (AVHE) can be used to explore and utilize valley degrees
of freedom in materials, which has potential applications in fields such as information …
of freedom in materials, which has potential applications in fields such as information …
Nonvolatile electrical control of the electronic and valleytronic properties by ferroelectricity in the VSi 2 P 4/Al 2 S 3 van der Waals heterostructure
S Zhang, N Jiao, H Lu, M Zheng, P Zhang… - Journal of Materials …, 2025 - pubs.rsc.org
In this paper, based on first-principles theory, we investigated the properties of the
multiferroic VSi2P4/Al2S3 van der Waals (vdW) heterostructure (HS), in which VSi2P4 and …
multiferroic VSi2P4/Al2S3 van der Waals (vdW) heterostructure (HS), in which VSi2P4 and …
Coexisting Ferroelectric, Ferromagnetic, and Ferrovalley Polarizations in Single Quintuple Layer ReAlGe2X6 (X = S, Se)
J Guo, Y Chen, M Li, G Wang, H Yuan… - The Journal of Physical …, 2024 - ACS Publications
Ferromagnetic semiconductors with coexisting ferroelectric and ferrovalley polarizations are
highly desirable for next-generation electronic devices and have rarely been discovered till …
highly desirable for next-generation electronic devices and have rarely been discovered till …
Ferroelectrically controlled electromagnetic and transport properties of VN 2 H 2/Al 2 O 3 van der Waals multiferroic heterostructures
C Sun, H Ye, Y Zhu, L Chen, D Bai, J Wang - Nanoscale, 2024 - pubs.rsc.org
The vertical integration of a ferromagnetic monolayer and a ferroelectric monolayer into van
der Waals heterostructures offers a promising route to achieve two-dimensional multiferroic …
der Waals heterostructures offers a promising route to achieve two-dimensional multiferroic …