This review describes recent groundbreaking results in Si, Si/SiGe, and dopant-based
quantum dots, and it highlights the remarkable advances in Si-based quantum physics that …

Starting with the simplest semiclassical approaches and ending with the description of
complex fully quantum-mechanical methods for quantum transport analysis of state-of-the …

Abstract Electron spins in Si/SiGe quantum wells suffer from nearly degenerate conduction
band valleys, which compete with the spin degree of freedom in the formation of qubits …

Silicon/silicon-germanium heterostructures have many important advantages for hosting
spin qubits. However, controlling the valley splitting (the energy splitting between the two …

Device physics and material science meet at the atomic scale of novel nanostructured
semiconductors, and the distinction between new device or new material is blurred. Not only …

Nanowire band-to-band tunneling field-effect transistors (TFETs) are simulated using the
Wentzel–Kramers–Brillouin (WKB) approximation and an atomistic, full-band quantum …

We demonstrate single-shot readout of a silicon quantum dot spin qubit, and we measure
the spin relaxation time T 1. We show that the rate of spin loading can be tuned by an order …

Bandstructure effects in the electronic transport of strongly quantized silicon nanowire field-
effect-transistors (FET) in various transport orientations are examined. A 10-band sp 3 d 5 s …

Silicon-quantum-dot qubits must contend with low-lying valley excited states that are
sensitive functions of the quantum-well heterostructure and disorder; quantifying and …

Silicon-germanium heterostructures have successfully hosted quantum dot qubits, but the
intrinsic near-degeneracy of the two lowest valley states poses an obstacle to high-fidelity …