With the continued miniaturization of devices in the semiconductor industry, atomic layer
deposition (ALD) of silicon nitride thin films (SiNx) has attracted great interest due to the …

The fabrication of next-generation semiconductor devices has created a need for low-
temperature (≤ 400 C) deposition of highly-conformal (> 95%) SiO 2, SiN x, and SiC films …

We present a comparative study of optical properties of silicon nitride thin films deposited by
reactive radio-frequency (R-RF) sputtering, low pressure chemical vapor deposition …

This study introduces the use of plasma-enhanced atomic layer deposition (PEALD) for
growing ultrathin Zr-doped hafnium oxide (HfO 2-ZrO 2 or HZO) nanolaminates and the …

Progress in transistor scaling has increased the demands on the material properties of
silicon nitride (SiN x) thin films used in device fabrication and at the same time placed …

This review discusses critical aspects of patterning phase change materials (PCMs),
including dry etching, wet clean, and encapsulation, as they dictate the reliability and …

Silicon nitride (SiNx) thin films using 1, 3-di-isopropylamino-2, 4-dimethylcyclosilazane
(CSN-2) and N2 plasma were investigated. The growth rate of SiNx thin films was saturated …

Deposition of titanium nitride (TiN) thin films has been studied by remote plasma enhanced
atomic layer deposition (PEALD) using MAP Ti (Mecaro Advanced Precursor-C 12 H 23 N 3 …

We developed a novel process for the atomic layer deposition (ALD) of SiC x N y films using
a Si2Cl6 and a CH3NH2 plasma. Under self-limiting growth conditions, this ALD process led …

In this work, a novel chlorodisilane precursor, pentachlorodisilane (PCDS, HSi2Cl5), was
investigated for the growth of silicon nitride (SiN x) via hollow cathode plasma-enhanced …