Straintronics: a new trend in micro-and nanoelectronics and materials science

AA Bukharaev, AK Zvezdin, AP Pyatakov… - Physics …, 2018 - iopscience.iop.org
The term'straintronics' refers to a new research area in condensed matter physics, in which
strain engineering methods and strain-induced physical effects in solids are used to develop …

Opportunities and challenges for magnetoelectric devices

JM Hu, CW Nan - Apl Materials, 2019 - pubs.aip.org
Magnetoelectric effect enables controlling magnetism with an electric field or controlling
polarization remotely with a magnetic field, without involving any driving electric currents …

Giant nonvolatile manipulation of magnetoresistance in magnetic tunnel junctions by electric fields via magnetoelectric coupling

A Chen, Y Wen, B Fang, Y Zhao, Q Zhang… - Nature …, 2019 - nature.com
Electrically switchable magnetization is considered a milestone in the development of
ultralow power spintronic devices, and it has been a long sought-after goal for electric-field …

[HTML][HTML] Magnetic straintronics: Manipulating the magnetization of magnetostrictive nanomagnets with strain for energy-efficient applications

S Bandyopadhyay, J Atulasimha… - Applied Physics Reviews, 2021 - pubs.aip.org
The desire to perform information processing, computation, communication, signal
generation, and related tasks, while dissipating as little energy as possible, has inspired …

Experimental demonstration of complete 180 reversal of magnetization in isolated Co nanomagnets on a PMN–PT substrate with voltage generated strain

AK Biswas, H Ahmad, J Atulasimha… - Nano …, 2017 - ACS Publications
Rotating the magnetization of a shape anisotropic magnetostrictive nanomagnet with
voltage-generated stress/strain dissipates much less energy than most other magnetization …

High performance MgO-barrier magnetic tunnel junctions for flexible and wearable spintronic applications

JY Chen, YC Lau, JMD Coey, M Li, JP Wang - Scientific reports, 2017 - nature.com
The magnetic tunnel junction (MTJ) using MgO barrier is one of most important building
blocks for spintronic devices and has been widely utilized as miniaturized magentic sensors …

Magnetoelectric coupling in ferromagnetic/ferroelectric heterostructures: A survey and perspective

G Channagoudra, V Dayal - Journal of Alloys and Compounds, 2022 - Elsevier
The material realization with significant coupling between magnetic and electric order
named “magnetoelectric effect” would be a major turning point for the modern electronic …

[HTML][HTML] Strain-mediated 180 switching in CoFeB and Terfenol-D nanodots with perpendicular magnetic anisotropy

Q Wang, X Li, CY Liang, A Barra, J Domann… - Applied Physics …, 2017 - pubs.aip.org
A micromagnetic and elastodynamic finite element model is used to compare the 180 out-of-
plane magnetic switching behavior of CoFeB and Terfenol-D nanodots with perpendicular …

Nonvolatile magnetoelectric switching of magnetic tunnel junctions with dipole interaction

A Chen, RC Peng, B Fang, T Yang… - Advanced Functional …, 2023 - Wiley Online Library
The magnetoelectric effect is technologically appealing because of its ability to manipulate
magnetism using an electric field rather than magnetic field or current, thus providing a …

Стрейнтроника—новое направление микро-и наноэлектроники и науки о материалах

АА Бухараев, АК Звездин, АП Пятаков… - Успехи физических …, 2018 - ufn.ru
Стрейнтроникой (straintronics) называют новое направление в физике
конденсированного состояния вещества, использующее методы деформационной …