Evaluating the Robustness of Complementary Channel Ferroelectric FETs Against Total Ionizing Dose Towards Radiation-Tolerant Embedded Nonvolatile Memory

Z Jiang, Z Guo, X Luo, M Sayed, Z Faris… - IEEE Electron …, 2023 - ieeexplore.ieee.org
In this work, a thorough assessment of the robustness of complementary channel HfO 2
ferroelectric FET (FeFET) against total ionizing dose (TID) radiation is conducted, with the …

Analyzing Total-Ionizing-Dose Induced Memory Window Degradation in Ferroelectric FinFET

S Woo, KA Aabrar, S Datta, S Yu - IEEE Transactions on Device …, 2023 - ieeexplore.ieee.org
The total-ionizing-dose (TID) effect of ferroelectric FinFET structure (Fe-FinFET) is analyzed
under various gamma ray irradiation conditions. An TCAD model is developed to …