This paper explores the application of resistive random-access memory (RRAM) devices in
emulating various synapse functions. The electrical properties of an indium tin oxide …

In this work, we have reported the temperature-dependent resistive switching (RS) behavior
observed in (1-x) CuI.(x) La 0.7 Sr 0.3 MnO 3 nanocomposites with 0.001< x< 0.05 within the …

The rise of neuromorphic systems has addressed the shortcomings of current computing
architectures, especially regarding energy efficiency and scalability. These systems use …

In this research, we report an enhanced sensing response ethanol gas sensing device
based on a ternary nanocomposite of molybdenum diselenide-zinc oxide heterojunctions …

The role of temperature dependent polaron density in current conduction mechanism of CeO
2-based devices is investigated where CeO 2− x films were deposited at different Ar: O 2 …

Recently, the nanostructured metal oxides are widely attracted for resistive switching
memory devices. In this work, nanostructured ZnO thin films were deposited via simple and …

In this research work Fe and Ni co-doped Tin oxide (SnO 2) nanoparticles have been
prepared by co-precipitation method. The samples were prepared at various combination of …

In the dynamic field of microelectronics, there is a notable trend towards leveraging carbon
materials, favored for their ease of synthesis, biocompatibility, and abundance. This trend is …

The increasing demand for energy-efficient data processing leads to a growing interest in
neuromorphic computing that aims to emulate cerebral functions. This approach offers cost …

Designing and manufacturing memristor devices with simple and less complicated methods
is highly promising for their future development. Here, an Ag/SnO2/FTO (F-SnO2) structure is …