Selective Data Writing in IrMn-Based Perpendicular Magnetic Tunnel Junction Array Through Voltage-Gated Spin-Orbit Torque
The interplay of spin-orbit torque (SOT) and voltage-controlled magnetic anisotropy (VCMA)
has great potential to be the next-generation writing method for low-power, fast-speed, and …
has great potential to be the next-generation writing method for low-power, fast-speed, and …
Experimental Demonstration of Field-Free STT-Assisted SOT-MRAM (SAS-MRAM) with Four Bits per SOT Programming Line
SAS-MRAM has been proposed as a potential last-level cache SRAM replacement owing to
its high speed (~ 1 ns), high cell density, and high endurance characteristics. Here, we …
its high speed (~ 1 ns), high cell density, and high endurance characteristics. Here, we …
High-Density STT-Assisted SOT-MRAM (SAS-MRAM) for Energy-Efficient AI Applications
Energy-efficient computing is essential for addressing the rising power demands of modern
data-intensive applications and ensuring sustainable technology advancement …
data-intensive applications and ensuring sustainable technology advancement …
Dynamic Time-Domain Sensing Scheme for Spin-Orbit Torque MRAM
While spin-orbit torque magnetic random access memory (SOT-MRAM) have shown huge
potential for building next-generation embedded memory due to their attractive …
potential for building next-generation embedded memory due to their attractive …
[PDF][PDF] High-Performance Multi-level Cell Design Using Reduced Retention Time Spintronics Device.
A PB, TS Warrier - Electrica, 2024 - electricajournal.org
Present-day computationally intensive on-chip applications consume much area and
energy. Multi-level cells (MLCs) capable of storing two-bit information can reduce this area …
energy. Multi-level cells (MLCs) capable of storing two-bit information can reduce this area …
[PDF][PDF] High-Performance Multi-level Cell Design Using Reduced Retention Time Spintronics Device
PB Alisha, TS Warrier - 2024 - electricajournal.org
Present-day computationally intensive on-chip applications consume much area and
energy. Multi-level cells (MLCs) capable of storing two-bit information can reduce this area …
energy. Multi-level cells (MLCs) capable of storing two-bit information can reduce this area …
High-Density STT-Assisted SOT-MRAM (SAS-MRAM) for Energy-Efficient AI Application
To enhance the energy efficiency and areal density of future computing systems, spin-orbit
torque magnetoresistive random access memory (SOT-MRAM) and its variants are being …
torque magnetoresistive random access memory (SOT-MRAM) and its variants are being …