[HTML][HTML] A perspective on the electro-thermal co-design of ultra-wide bandgap lateral devices
Fundamental research and development of ultra-wide bandgap (UWBG) semiconductor
devices are under way to realize next-generation power conversion and wireless …
devices are under way to realize next-generation power conversion and wireless …
A review of thermoreflectance techniques for characterizing wide bandgap semiconductors' thermal properties and devices' temperatures
Thermoreflectance-based techniques, such as pump–probe thermoreflectance (pump–
probe TR) and thermoreflectance thermal imaging (TTI), have emerged as the powerful and …
probe TR) and thermoreflectance thermal imaging (TTI), have emerged as the powerful and …
Device-level thermal management of gallium oxide field-effect transistors
B Chatterjee, K Zeng, CD Nordquist… - IEEE Transactions …, 2019 - ieeexplore.ieee.org
The ultrawide bandgap (UWBG)(~ 4.8 eV) and melt-grown substrate availability of β-Ga 2 O
3 give promise to the development of next-generation power electronic devices with …
3 give promise to the development of next-generation power electronic devices with …
130 mA mm− 1 β-Ga2O3 metal semiconductor field effect transistor with low-temperature metalorganic vapor phase epitaxy-regrown ohmic contacts
We report on the first demonstration of metalorganic vapor phase epitaxy-regrown (MOVPE)
ohmic contacts in an all MOVPE-grown β-Ga 2 O 3 metal semiconductor field effect transistor …
ohmic contacts in an all MOVPE-grown β-Ga 2 O 3 metal semiconductor field effect transistor …
Nanoscale electro-thermal interactions in AlGaN/GaN high electron mobility transistors
Self-heating in AlGaN/GaN high electron mobility transistors (HEMTs) negatively impacts
device performance and reliability. Under nominal operating conditions, a hot-spot in the …
device performance and reliability. Under nominal operating conditions, a hot-spot in the …
Ultra-Wide Band Gap Ga2O3-on-SiC MOSFETs
Ultra-wide band gap semiconductor devices based on β-phase gallium oxide (Ga2O3) offer
the potential to achieve higher switching performance and efficiency and lower …
the potential to achieve higher switching performance and efficiency and lower …
Designing fast and efficient electrically driven phase change photonics using foundry compatible waveguide-integrated microheaters
Phase change chalcogenides such as Ge_2Sb_2Te_5 (GST) have recently enabled
advanced optical devices for applications such as in-memory computing, reflective displays …
advanced optical devices for applications such as in-memory computing, reflective displays …
[HTML][HTML] Thermal characterization of gallium oxide Schottky barrier diodes
The higher critical electric field of β-gallium oxide (Ga 2 O 3) gives promise to the
development of next generation power electronic devices with improved size, weight, power …
development of next generation power electronic devices with improved size, weight, power …
[HTML][HTML] Thermal design of multi-fin Ga2O3 vertical transistors
Ultra-wide bandgap β-gallium oxide (Ga 2 O 3) vertical device technologies are of significant
interest in the context of the development of next-generation kV-range power switching …
interest in the context of the development of next-generation kV-range power switching …
Near-junction microfluidic cooling for GaN HEMT with capped diamond heat spreader
With a constant push to shrink size and elevate power density, the heat flux in GaN-based
devices is drastically intensified, requiring effective cooling to control junction temperature …
devices is drastically intensified, requiring effective cooling to control junction temperature …