Here we report the first spectroscopic alpha particle detection based on CsPbBr 3 detectors
with asymmetric contacts. The CsPbBr 3 single crystal was grown from the melt using …

Defects deteriorate the optical and electronic properties of the cadmium zinc telluride (CZT)
single crystal. However, the growth of defects, such as vacancies and precipitation, could not …

The direct integration of GaN with Si can boost great potential for low-cost, large-scale, and
high-power device applications. However, it is still challengeable to directly grow GaN on Si …

Cadmium zinc telluride crystals of 4.8 cm in diameter grown by the boron oxide
encapsulated vertical Bridgman technique exhibit good structural quality with large grains …

Consideration of irradiation effects is important for in-orbit operation and radiation protection
in aerospace applications. The configuration of irradiation defects and their impact on …

Thinning the buffer layer thickness between the GaN epilayer and Si substrate without
introducing large residual stress is persistently desired for GaN-on-Si devices to promote …

CdTe and CdZnTe crystals are employed for several applications such as IR imaging, X-and
gamma ray detection, optical devices, and photovoltaics. These applications require that …

CdZnTe (CZT) has attracted much attention in nuclear detection field attribute to its high
detection efficiency, high energy resolution and room-temperature operation. In this work …

The previously developed model of the cross-sectional stationary shape of a liquid inclusion
migrating through a non-uniformly heated crystal has been extended to the case of transient …

The migration of dislocations in substrate-grade CdZnTe (CZT) single crystals during
temperature gradient annealing under Cd/Zn vapor has been investigated. The etch pit …