Extensive work on InAs quantum dots grown on GaAs substrates has been reported in the
literature. However, research in the use of different substrate materials such as silicon to …

We describe InAs quantum dot creation in InAs/GaAsSb barrier structures grown on GaAs
(001) wafers by molecular beam epitaxy. The structures consist of 20-nm-thick GaAsSb …

The effect of post‐growth annealing on InAs/GaAs quantum dot solar cells (QDSCs) is
studied. A significant improvement in photoemission, photocurrent density and spectral …

GaAsPBi is a comparatively novel quaternary III–V compound semiconductor with attractive
properties that suit optoelectronic applications. However, the quaternary compound …

GaAsPBi is a novel semiconductor that can broaden the bandgap range of III− V
compounds, but its growth on GaAs (001) by molecular beam epitaxy is complicated by the …

This study presents high efficiency InGaP/InGaAs/Ge triple‐junction (3‐J) solar cells
incorporated in the middle cell with layers of InGaAs/GaAs quantum dots (QDs) grown by …

Stacked InAs quantum dot chains (QDCs) on InGaAs/GaAs cross-hatch pattern (CHP)
templates yield a rich emission spectrum with an unusual carrier transfer characteristic …

Abstract Stacked InAs quantum dots (QDs) are grown on InGaAs/GaAs cross-hatch patterns
(CHPs) by molecular beam epitaxy. The QDs, found almost exclusively on the cross …

Strained silicon (Si) and silicon-germanium (SiGe) devices have long been recognised for
their enhanced mobility and higher on-state current compared with bulk-Si transistors …

Metamorphic growth presents routes to novel nanomaterials with unique properties that may
be suitable for a range of applications. We discuss self-assembled, epitaxial nanowires …