A survey on RF and microwave doherty power amplifier for mobile handset applications
This survey addresses the cutting-edge load modulation microwave and radio frequency
power amplifiers for next-generation wireless communication standards. The basic …
power amplifiers for next-generation wireless communication standards. The basic …
A review of Doherty power amplifier and load modulated balanced amplifier for 5G technology
S Makhsuci, S Masoumeh Navidi… - … Journal of Circuit …, 2023 - Wiley Online Library
In this paper, functionality of the Doherty power amplifiers (DPAs) along with their design
constraints such as DPA combining techniques are reviewed. This is because power …
constraints such as DPA combining techniques are reviewed. This is because power …
Design of a wideband Doherty power amplifier with high efficiency for 5G application
This paper discusses the design of a wideband class AB-C Doherty power amplifier suitable
for 5G applications. Theoretical analysis of the output matching network is presented …
for 5G applications. Theoretical analysis of the output matching network is presented …
Watt-level 21–25-GHz integrated Doherty power amplifier in GaAs technology
This letter presents the design and characterization of a Doherty power amplifier for K-band
applications based on the GaAs 150-nm pseudomorphic HEMT (pHEMT) technology of …
applications based on the GaAs 150-nm pseudomorphic HEMT (pHEMT) technology of …
Thermal-aware GaN/Si MMIC design for space applications
Thermal stress in microwave power devices is a major issue for space applications, with a
detrimental impact on the operating life-time of MMICs on board satellites. To limit this …
detrimental impact on the operating life-time of MMICs on board satellites. To limit this …
Broadband class-J GaN Doherty power amplifier
This paper presents a broadband 3–3.7 GHz class-J Doherty power amplifier exploiting
second harmonic tuning in the output network. Furthermore, the output impedance inverter is …
second harmonic tuning in the output network. Furthermore, the output impedance inverter is …
A New Study on the Temperature and Bias Dependence of the Kink Effects in S22 and h21 for the GaN HEMT Technology
The aim of this feature article is to provide a deep insight into the origin of the kink effects
affecting the output reflection coefficient (S 22) and the short-circuit current-gain (h 21) of …
affecting the output reflection coefficient (S 22) and the short-circuit current-gain (h 21) of …
Catalyzing satellite communication: A 20W Ku-Band RF front-end power amplifier design and deployment
J Chen, F Wang, D Zhang, J Liu, H Wu, Z Zhou, H Yang… - Plos one, 2024 - journals.plos.org
This paper presents a groundbreaking Ku-band 20W RF front-end power amplifier (PA),
designed to address numerous challenges encountered by satellite communication …
designed to address numerous challenges encountered by satellite communication …
A highly linearized second harmonic injected GaN power amplifier
F Abbasnezhad, M Tayarani… - Microwave and …, 2022 - Wiley Online Library
This article presents an active second harmonic injection technique for linearizing power
amplifiers (PAs). In this method, a second harmonic signal with adjustable amplitude and …
amplifiers (PAs). In this method, a second harmonic signal with adjustable amplitude and …
Design of Ultra-Wideband Doherty Power Amplifier Using a Modified Combiner Integrated with Complex Combining Impedance
J Chen, Z Liu, T Dong, W Shi - Sensors, 2023 - mdpi.com
To be compatible with future wireless communication systems, it is very necessary to extend
the bandwidth of the Doherty power amplifier (DPA). In this paper, a modified combiner …
the bandwidth of the Doherty power amplifier (DPA). In this paper, a modified combiner …