A survey on RF and microwave doherty power amplifier for mobile handset applications

M Sajedin, ITE Elfergani, J Rodriguez… - Electronics, 2019 - mdpi.com
This survey addresses the cutting-edge load modulation microwave and radio frequency
power amplifiers for next-generation wireless communication standards. The basic …

A review of Doherty power amplifier and load modulated balanced amplifier for 5G technology

S Makhsuci, S Masoumeh Navidi… - … Journal of Circuit …, 2023 - Wiley Online Library
In this paper, functionality of the Doherty power amplifiers (DPAs) along with their design
constraints such as DPA combining techniques are reviewed. This is because power …

Design of a wideband Doherty power amplifier with high efficiency for 5G application

A Nasri, M Estebsari, S Toofan, A Piacibello, M Pirola… - Electronics, 2021 - mdpi.com
This paper discusses the design of a wideband class AB-C Doherty power amplifier suitable
for 5G applications. Theoretical analysis of the output matching network is presented …

Watt-level 21–25-GHz integrated Doherty power amplifier in GaAs technology

C Ramella, V Camarchia, A Piacibello… - IEEE Microwave and …, 2021 - ieeexplore.ieee.org
This letter presents the design and characterization of a Doherty power amplifier for K-band
applications based on the GaAs 150-nm pseudomorphic HEMT (pHEMT) technology of …

Thermal-aware GaN/Si MMIC design for space applications

C Ramella, M Pirola, A Reale… - 2019 IEEE …, 2019 - ieeexplore.ieee.org
Thermal stress in microwave power devices is a major issue for space applications, with a
detrimental impact on the operating life-time of MMICs on board satellites. To limit this …

Broadband class-J GaN Doherty power amplifier

A Nasri, M Estebsari, S Toofan, A Piacibello, M Pirola… - Electronics, 2022 - mdpi.com
This paper presents a broadband 3–3.7 GHz class-J Doherty power amplifier exploiting
second harmonic tuning in the output network. Furthermore, the output impedance inverter is …

A New Study on the Temperature and Bias Dependence of the Kink Effects in S22 and h21 for the GaN HEMT Technology

G Crupi, A Raffo, V Vadalà, G Vannini, A Caddemi - Electronics, 2018 - mdpi.com
The aim of this feature article is to provide a deep insight into the origin of the kink effects
affecting the output reflection coefficient (S 22) and the short-circuit current-gain (h 21) of …

Catalyzing satellite communication: A 20W Ku-Band RF front-end power amplifier design and deployment

J Chen, F Wang, D Zhang, J Liu, H Wu, Z Zhou, H Yang… - Plos one, 2024 - journals.plos.org
This paper presents a groundbreaking Ku-band 20W RF front-end power amplifier (PA),
designed to address numerous challenges encountered by satellite communication …

A highly linearized second harmonic injected GaN power amplifier

F Abbasnezhad, M Tayarani… - Microwave and …, 2022 - Wiley Online Library
This article presents an active second harmonic injection technique for linearizing power
amplifiers (PAs). In this method, a second harmonic signal with adjustable amplitude and …

Design of Ultra-Wideband Doherty Power Amplifier Using a Modified Combiner Integrated with Complex Combining Impedance

J Chen, Z Liu, T Dong, W Shi - Sensors, 2023 - mdpi.com
To be compatible with future wireless communication systems, it is very necessary to extend
the bandwidth of the Doherty power amplifier (DPA). In this paper, a modified combiner …