Wurtzite and fluorite ferroelectric materials for electronic memory
Ferroelectric materials, the charge equivalent of magnets, have been the subject of
continued research interest since their discovery more than 100 years ago. The …
continued research interest since their discovery more than 100 years ago. The …
Demonstration of multiply-accumulate operation with 28 nm fefet crossbar array
This letter reports a linear multiply-accumulate (MAC) operation conducted on a crossbar
memory array based on 28nm high-k metal gate (HKMG) Complementary Metal Oxide …
memory array based on 28nm high-k metal gate (HKMG) Complementary Metal Oxide …
Multilevel operation of ferroelectric fet memory arrays considering current percolation paths impacting switching behavior
This letter reports multi-level-cell (MLC) operation of ferroelectric FETs (FeFET) arranged in
AND-connected memory arrays with a bit-error rate (BER) of 4% when writing a random data …
AND-connected memory arrays with a bit-error rate (BER) of 4% when writing a random data …
Metal–Ferroelectric–Semiconductor Tunnel Junction: Essential Physics and Design Explorations
N Feng, H Li, B Peng, F Zhang, P Cai… - … on Electron Devices, 2023 - ieeexplore.ieee.org
The essential physics of the ferroelectric tunnel junction (FTJ) is assessed with technology
computer-aided design (TCAD) simulations and analytical models. With experimental data …
computer-aided design (TCAD) simulations and analytical models. With experimental data …
Tunable defect engineering of Mo/TiON electrode in angstrom-laminated HfO2/ZrO2 ferroelectric capacitors towards long endurance and high temperature retention
A novel defect control approach based on laminated HfO 2/ZrO 2 with multifunctional
TiN/Mo/TiO x N y electrode is proposed to significantly improve the endurance and data …
TiN/Mo/TiO x N y electrode is proposed to significantly improve the endurance and data …
Grain Size Reduction of Ferroelectric HZO Enabled by Solid Phase Epitaxy (SPE): Working Principle, Experimental Demonstration, and Theoretical Understanding
In this work, we introduce an effective and versatile technique employing replacement
electrode solid phase epitaxy (SPE) to realize grain size reduction of the Zr-doped HfO2 …
electrode solid phase epitaxy (SPE) to realize grain size reduction of the Zr-doped HfO2 …
Analog-Based Synapse of Double HfZrO2 Ferroelectric FETs With Homogeneous Phase by Superlattice HfO2-ZrO2 Toward Energy Efficient Accelerator
ZF Lou, A Senapati, JY Lee, FS Chang… - … on Materials for …, 2024 - ieeexplore.ieee.org
Since the analog-based energy-efficient accelerator for synapses is highly demanded in the
artificial intelligence (AI) era, the homogeneous and coherence ferroelectric phase of HfZrO …
artificial intelligence (AI) era, the homogeneous and coherence ferroelectric phase of HfZrO …
Hafnium-Oxide-Based Ferroelectric Memory Devices for Low-Power Applications
Z Zuopu - 2023 - search.proquest.com
The ever-growing demand for computing power, coupled with the surging data volume and
data-centric computing, fuels the pursuit of a revolutionary memory device to mitigate the …
data-centric computing, fuels the pursuit of a revolutionary memory device to mitigate the …