This is an introductory survey of the vibrational spectroscopy of defects in semiconductors
that contain light-mass elements. The capabilities of vibrational spectroscopy for the …

Channel hot-carrier degradation presents a renewed interest in the last NMOS nodes where
the device reliability of bulk silicon (core) 40 nm and Input/Output (IO) device is difficult to …

This paper presents a theoretical framework about interface state creation rate from Si–H
bonds at the Si∕ Si O 2 interface. It includes three main ways of bond breaking. In the first …

Characterization of defect and impurity reactions, dissociation, and migration in
semiconductors requires a detailed understanding of the rates and pathways of vibrational …

The vibrational lifetimes and decay channels of local vibrational modes are calculated from
first principles at various temperatures. Our method can be used to predict the temperature …

We refine our approach for hot-carrier degradation modeling based on a thorough
evaluation of the carrier energy distribution by means of a full-band Monte–Carlo simulator …

Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these
materials still demand research, eminently in view of the improvement of knowledge on …

We present a thorough analysis of physics-based hot-carrier degradation (HCD) models. We
discuss the main features of HCD such as its strong localization at the drain side of the …

Atomic-scale defects can control the exploitable optoelectronic performance of crystalline
materials, and several point defects in diamond are emerging functional components for a …

The 2644.5 cm− 1 vibrational line observed in ZnO grown by the hydrothermal method and
doped with D impurities is split into two components with intensities consistent with the …