This report describes recent developments and current needs in the field of high-resolution
photopolymers and photomolecules briefly describing prior generation lithographic …

Sub-10 nm patterning with extreme ultraviolet (EUV) light is receiving immediate attention as
a next-generation nanolithography technique, but photoresist materials optimized to EUV …

Extreme ultraviolet (EUV) lithography (13.5 nm) is the newest technology that allows high-
throughput fabrication of electronic circuitry in the sub-20 nm scale. It is commonly assumed …

Extreme ultraviolet (EUV)-induced radiation exposure chemistry in organotin–oxo systems,
represented by the archetypal [(R–Sn) 12O14 (OH) 6](A) 2 cage, has been investigated with …

The amount of absorbed light in thin photoresist films is a key parameter in photolithographic
processing, but its experimental measurement is not straightforward. The optical absorption …

Photoresist materials are being optimized for the recently introduced Extreme Ultraviolet
(EUV) photolithographic technology. Organometallic compounds are potential candidates …

We report on the extreme ultraviolet (EUV) patterning performance of tin-oxo cages. These
cage molecules were already known to function as a negative tone photoresist for EUV …

Organic–inorganic hybrid compounds are arising as promising resist materials for extreme-
ultraviolet (EUV) lithography, a new technique introduced in the semiconductor industry for …

Details of the chemistry enabling the patterning of organotin photoresists to single-digit-nm
resolution continue to engage study. In this report, we examine the contributions of …

Background: Inorganic resists show promising performances in extreme ultraviolet (EUV)
lithography. Yet, there is a need for understanding the exact chemical mechanisms induced …